| 著作名稱： | Sheng-Kuei Chiu* , Bo-Cyuan Lin , Lu-Chih Chen , Hau-Gung Chen , Cheng-Chi Peng , Zhi-Chao Yang |
| 年度： | 2025 |
| 類別： |
期刊論文
Surface and Coatings Technology
|
| 摘要： | Researchers have extensively investigated 2D nanomaterials of TMN owing to its superior chemical and physical characteristics and numerous potential uses. Research on the synthesis of TMNs was insufficient and remained stagnant. Here, we alter precursor types and substrates and develop three CVD procedures for synthesizing TMN. High-quality signal-crystal MoN nanoflakes were synthesized using sodium molybdate precursors. The same growth conditions directly induced the formation of Mo5N6 nanofilms on sapphire substrate. We synthesized large-area MoN nanofilms on silicon substrates by conducting a nitrogen substitution reaction on MoS2 nanofilms. MoS2 serves as the precursor for MoN nanofilms synthesis via nitridation. MoNs characteristic peak at 143.34 cm−1 was located using Raman spectroscopy. We obtained epitaxial growth of Mo5N6 nanofilms at low pressure (66 cm Hg) on a sapphire substrate. Mo5N6 nanofilms exhibited a distinctive Raman spectroscopy signal at 154.03 cm−1. In anticipation of its prospective applications, we assessed the electrical properties of Mo5N6 nanofilms. Additionally, the resistivity of Mo5N6 was found to be 1.555*10−5 Ωcm. Large-area 2D nanomaterials, such as Mo5N6, have the potential to be employed as graphene or other semimetal materials in the electronic device industry, as evidenced by the temperature dependency of the conductivity test. |
| 關鍵字： | |
| 著作名稱： | ntrinsic setting of the exciton state in MoS2 monolayers via tailoring the Moiré correlation with a sapphire substrate |
| 年度： | 2025 |
| 類別： |
期刊論文
Nanoscale
|
| 摘要： | This study aims to elucidate the specific Moiré correlation and associated exciton properties within MoS2 monolayers grown randomly oriented on a c-cut single-crystalline sapphire (Al2O3) substrate, which facilitates a distinct Moiré correlation. Notably, the exciton state in MoS2 monolayers appeared periodically linked to the stacking geometry with the sapphire substrate. Specifically, the observed stacking configuration of MoS2[11[2 with combining macron]0]/Al2O3[11[2 with combining macron]0] induced a redshifted exciton state, while a 30-degree-misaligned stacking, such as MoS2[11[2 with combining macron]0]/Al2O3[01[1 with combining macron]0], increased the exciton energy. The variation in the exciton state due to changes in the stacking geometry between MoS2 and sapphire thus exhibited a 6-fold periodicity, reflecting the combination of hexagonal MoS2 and the trigonal sapphire substrate. This transition in the exciton state of the MoS2 monolayer was attributed to stacking-induced strain: the MoS2[11[2 with combining macron]0]/Al2O3[11[2 with combining macron]0] stack resulted in a closely packed nature with induced tensile strain in the film plane, whereas the MoS2[11[2 with combining macron]0]/Al2O3[01[1 with combining macron]0] stack appeared lightly packed, thus rendering the MoS2 structurally relaxed. These findings regarding the stacking-induced strain issues are consistent with the results of Raman spectra. This work underscores the potential for manipulating the crystallographic stacking between single-crystalline MoS2 monolayers and sapphire substrates to serve as a versatile platform for investigating photonics in MoS2-based heterostructures. |
| 關鍵字： | |
| 著作名稱： | Sheng-Kuei Chiu, Li-Ting Hong and Rong-Fuh Louh |
| 年度： | 2025 |
| 類別： |
期刊論文
NANOTECHNOLOGY
|
| 摘要： | The composition, microstructure, and electrochemical properties of the two kinds of thin film electrode materials, namely VS2/MoS2/Ni-IOS and VS2/MoS2/Ni-foam, were analyzed. The research results indicate that the self-assembled photonic crystal (PhC) templates with adjusted electrophoretic self-assembly processing parameters (100 V cm−1; 7 min) would lead the specimen to a face-centered closely packed structure. Metallic nickel inverse opal structure (IOS) PhCs whose thickness can be freely regulated simply by electrochemical deposition time. VS2 and MoS2 are 2D materials with excellent electrochemical properties. We employed them as the electroactive material in this study and deposited them onto nickel IOS (Ni-IOS) surfaces to form a composite of The specimens exhibited an excellent specific capacitance (2180 F g−1) at a charge–discharge current density of 5 A g−1. After the 2000 cycles during the life test, the sample can still retain the original specific capacitance value by 72.3%. The IOS PhC substrate produced in this work is designed as VS2/MoS2/Ni-IOS supercapacitor electrode materials, which is proved to offer a significant technical contribution to the application of 2D materials in high-performance supercapacitors currently. |
| 關鍵字： | supercapacitor electrode materials, electrophoretic self-assembly (EPSA), electrochemical deposition (ECD), successive ionic layer adsorption and reaction (SILAR), photonic crystals (PhCs), inverse opal structure (IOS), polystyrene (PS) microspheres |