| 著作名稱： | Thermodynamics and kinetics insight into reaction mechanism of Cu2ZnSnSe4 nanoink based on binary metal-amine complexes in polyetheramine-synthesized process |
| 年度： | 2016 |
| 類別： |
期刊論文
Journal of Alloys and Compounds
|
| 摘要： | This paper reports on the reaction mechanism of Cu2ZnSnSe4 (CZTSe) nanoink via a solvent-thermal reflux method using copper (Cu), zinc (Zn), tin (Sn), and selenium (Se) powders as precursors and polyetheramine as a reaction solvent. The formation of CZTSe nanoparticles in polyetheramine began with the formation of binary phase CuSe and CuSe2 due to the strong catalysis provided by polyetheramine. Finally, ternary crystals of Cu2SnSe3 transformed into well-dispersed nanocrystals of Cu2ZnSnSe4. The size of the crystals was shown to decrease with reaction time due to the emulsification effect of the polyetheramine epoxy group. The PH value-reaction time curves for single Cu, Zn elements and CZTSe from all participants elements reacted together have a relationship just reversed each other and both multistage feature were observed, which indicates that the CZTSe reaction was dominated by copper and zinc elements. The PH-temperature mechanism demonstrates that the reaction was controlled by the formation of metal-amine complexes, especially, after heating the PH-time variation manner is the same
for pure element and all four elements reacted together. To the best of our knowledge, this is the first study on the mechanism underlying CZTSe formation based on the reactivity and stability of reaction species. |
| 關鍵字： | Reaction mechanism; Cu2ZnSnSe4 (CZTSe); Nanoink; Polyetheramine; Metal-amine complexes |
| 著作名稱： | Fabrication and sulfurization of Cu2SnS3thin films with tuning theconcentration of Cu-Sn-S precursor ink |
| 年度： | 2016 |
| 類別： |
期刊論文
Applied Surface Science
|
| 摘要： | In this study, Cu-Sn-S nanoinks were synthesized by combining chelating polyetheramine to Cu, Sn, S powders of various concentrations. X-ray diffraction patterns indicate that nanoinks synthesized at low concentrations are composed almost entirely of binary phases SnS and Cu2S. Synthesizing nanoinks at higher concentrations decreased the quantity of binary phase and led to the appearance of ternary phase Cu4SnS4. Following sulfurization, single phase Cu2SnS3 (CTS) thin film was obtained from nanoinks of low concentration; however, impurities, such as Cu2S were detected in the thin film obtained from nanoinks of high concentration. This can be attributed to the fact that lower concentrations reduce the reactivity of all the elements. As a result, the SnS phase reacted more readily and more rapidly, resulting in the early formation of a stoichiometric CTS thin film during sulfurization. Under these reaction conditions, Cu2S and SnS transform into CTS and thereby prevent the formation of unwanted phases of Cu2S and Cu4SnS4. Raman spectra revealed that second phase Cu2S phase remained in the high-concentration samples, due to an increase in reactivity due to the participation of a greater proportion of the copper in the reaction. The surface microstructure of low-concentration samples display closely packed Cu2SnS3 grains with a flat morphology and an atomic composition ratio of Cu:Sn:S 34.69:15.90:49.41, which is close to stoichiometric. Hall measurement revealed that low-concentration sample has superior electrical properties; i.e., a hole concentration of 5.23 × 1017 cm-3, mobility of 14.2 cm2/V-s, and optical band-gap energy of 1.346 eV, which are suitable for thin-film solar cells. |
| 關鍵字： | Sulfurization, Cu2SnS3, Thin films, Precursor |
| 著作名稱： | White-Light Emission From GaN-Based TJ LEDs Coated With Red Phosphor |
| 年度： | 2016 |
| 類別： |
期刊論文
IEEE ELECTRON DEVICE LETTERS
|
| 摘要： | We report the fabrication of white light-emitting diode (LED) lamps by coating red phosphor onto the green/blue dual-color tunnel-junction (TJ) LED chips. For the dual-color TJ LED chips without phosphor coating, it was found that electroluminescence intensity of the green peak increased faster than that of the blue peak, as we increased the injection current. Under the same injection current, it was found that power consumption and heat generation were larger for the TJ LEDs,
as compared with the conventional blue LED chips. By coating 0.1-g red phosphor onto the 660 × 760 µm2 dual-color TJ LED chips, we achieved white LED lamps with color temperature, TC,
of 4102 K, color-rending index, CRI, of 68, and the Commission Internationale de L’Eclairage color coordinates of (0.32, 0.36). Furthermore, it was found that TC observed from the dual-color
TJ LED+red phosphor white LED lamps were smaller than those observed from the blue ED+yellow phosphor white LED lamps.
|
| 關鍵字： | GaN, LEDs, white-light, hybrid tunnel junction, phosphor. |
| 著作名稱： | GaN-Based Power Flip-Chip LEDs With SILAR
and Hydrothermal ZnO Nanorods |
| 年度： | 2015 |
| 類別： |
期刊論文
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
|
| 摘要： | In this paper, we present a simple and low-cost method combined successive ionic layer adsorption and reaction (SILAR) with Hydrothermal (Hm) to form ZnO nanorods for GaN-based power flip-chip light-emitting diodes (LEDs). With 350mA current injection, it was found that forward voltages were all 2.97 V when the 350mA output powers were 361.7, 420.7, 426.8, 448.2, and 430.4 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. It was also found that the light output power (LOP) of LED IV was 24 % larger than that of LED I. Furthermore, it was also found that the formation of ZnO nanorods on the top of sapphire will not degrade the electrical properties. |
| 關鍵字： | GaN, LEDs, flip-chip, SILAR, ZnO nanopillars, hydrothermal |
| 著作名稱： | GaN-based white LEDs with CIS/ZnS quantum dots synthesized using polyetherarmine as solvent |
| 年度： | 2015 |
| 類別： |
期刊論文
IEEE Journal of Quantum Electronics
|
| 摘要： | The authors propose a fast and low-temperature method to synthesize CuInS2/ZnS quantum dots (CIS/ZnS QDs) using polyetheramine (D400) as solvent. It was found that the CIS/ZnS QDs synthesized at 140oC exhibited a broad photoluminescence (PL) emission bandwidth (i.e., 135 nm) and a small PL blue-shifted (i.e., 20 nm) as we coated the ZnS shells onto the CIS cores. Compared with the conventional white light-emitting diodes (WLEDs) with phosphor only, it was found that we could improve color rendering index (CRI) and correlated color temperature (CCT) by adding the CIS/ZnS QDs. |
| 關鍵字： | GaN, white LEDs, CIS/ZnS, quantum dots, polyetherarmine |
| 著作名稱： | Solution-growth ZnO nanorods for light extraction in Ga-based flip-chip LEDs |
| 年度： | 2015 |
| 類別： |
期刊論文
ECS Solid State Letters
|
| 摘要： | |
| 關鍵字： | Solution-growth, ZnO nanorods, light extraction, GaN, flip-chip |
| 著作名稱： | Design and Fabrication of a TiO2/SiO2 Dielectric Broadband and Wide-Angle Reflector and Its Application to GaN-Based Blue LEDs |
| 年度： | 2015 |
| 類別： |
期刊論文
IEEE Journal of Quantum Electronics
|
| 摘要： | |
| 關鍵字： | TiO2/SiO2, Dielectric Broadband, Wide-Angle Reflector, GaN LEDs |
| 著作名稱： | Multiple Nanostructures on Full Surface of
GZO/GaN-Based LED to Enhance Light-Extraction
Efficiency Using a Solution-Based Method |
| 年度： | 2014 |
| 類別： |
期刊論文
IEEE JOURNAL OF QUANTUM ELECTRONICS
|
| 摘要： | This paper reports a solution-based method for the application of multiple nanostructures on full surface of GZO/GaN-based LEDs to enhance light-extraction efficiency. Ga-doped ZnO (GZO) was deposited to a thickness of 1 μm and an n+-InGaN/GaN short-period superlattice structure was grown to improve the electrical characteristics of the LEDs, including
series resistance and operating voltage. A solution-based method
was used to control the density of ZnO nanoparticles deposited on the SiO2 layer for use as self-assembled etching nanomasks. Multiple nanostructures were simultaneously formed on the surfaces of GZO, p-GaN, and n-GaN by dry etching. The proposed LEDs increase light output power by 10%–27% (at 20 mA) over
that of regular GaN-based LEDs. The difference in light output power can be attributed to differences in the shape, thickness, and density of GZO and GaN nanostructures, resulting in a reduction in Fresnel reflection provided by the roughened surface of the
GaN-based LEDs. |
| 關鍵字： | GaN-based light emitting diode, output power, SILAR. |
| 著作名稱： | SiNx nanopillars on AlGaInP-based light-emitting diodes to enhance light extraction using self-assembly ZnO nanomask coating by successive ionic layer adsorption and reaction method |
| 年度： | 2014 |
| 類別： |
期刊論文
Thin Solid Films
|
| 摘要： | This study presents a cost-effective method of producing SiNx nanopillars on the surfaces of AlInGaP-based lightemitting diodes (LEDs) to enhance light extraction using successive ionic layer adsorption and reaction (SILAR). The SILAR-coated ZnO nanoparticles were used as a self-assembly dry etching mask over a SiNx film during inductively
coupled plasma etching. The proposedmethod provides a control on the density of ZnO nanoparticles.
Optimizing the SiNx nanopillars on the surface of AlInGaP-based LEDs provided a 33.7% increase in light output power, compared to an ordinary flat surface LED, without a significant degradation in electrical properties. The increase in performance can be attributed to a reduction in Fresnel reflection and increased scattering by the addition of SiNx nanopillars across the emission surface of AlInGaP LEDs. |
| 關鍵字： | SiNx nanopillars, AlInGaP LEDs, SILAR-coated ZnO |
| 著作名稱： | Novel solution process for synthesis of CIGS nanoparticles using polyetheramine as solvent |
| 年度： | 2014 |
| 類別： |
期刊論文
Materials Letters
|
| 摘要： | Chalcopyrite,CuInxGa1xSe (CIGS),is widely applied in the fabrication of thin-film solar cells,due to its
high efficiency and stability. The high costs and complexity of vacuum processes have driven the development of non-vacuum methods, such as solvothermal approache susing organic solvents and metal salts. To overcome the problems of energy waste and carbon residue, this study synthesized ink of CIGS nanoparticles using the solvent-thermal refluxing method at 250 1C with polyetheramine as the
chelating solvent.TheresultingCIGSparticleswerecharacterizedbyXRD,Raman, TEM and UV–vis to investigate the crystal structure, composition, morphology, and bandgap. This paper demonstrates the considerable potential for the synthes is of nanoscale CIGS particle ink using a low-cost, simple process, applicable form as production. |
| 關鍵字： | nanoscale, CIGS, particle, ink |
| 著作名稱： | Improving Light Output Power of AlInGaP-Based LEDs Using
GaP Nanorods Prepared by SILAR Method |
| 年度： | 2013 |
| 類別： |
期刊論文
ECS Solid State Letters
|
| 摘要： | This paper reports a simple, cost-effective method using successive ionic layer adsorption and reaction (SILAR) in conjunction with dry etching for the fabrication of random GaP nanorods on a window layer of AlGaInP-based LEDs. The proposed method provides control over the size and density of the nanorods through the adjustment of ZnO nanomasks used in the SILAR process. Optimizing the nano-roughened morphology of a p-GaP surface provided a 78.34% increase in light output power, compared to an ordinary flat
surface LED, without a significant degradation in electrical properties. |
| 關鍵字： | LED, GaP, Nanorods, SILAR Method |
| 著作名稱： | Improving light output power of AlInGaP-based LEDs using GaP nanorods prepared by SILAR method |
| 年度： | 2013 |
| 類別： |
期刊論文
ECS Solid State Letters
|
| 摘要： | This paper reports a simple, cost-effective method using successive ionic layer adsorption and reaction (SILAR) in conjunction with dry etching for the fabrication of random GaP nanorods on a window layer of AlGaInP-based LEDs. The proposed method provides control over the size and density of the nanorods through the adjustment of ZnO nanomasks used in the SILAR process. Optimizing the nano-roughened morphology of a p-GaP surface provided a 78.34% increase in light output power, compared to an ordinary flat surface LED, without a significant degradation in electrical properties. |
| 關鍵字： | light output power, GaP nanorods, SILAR method |
| 著作名稱： | SiN Nanopillars on GaN-Based LED to Enhance Light-Extraction Efficiency by a Successive Ionic Layer Adsorption and Reaction Method |
| 年度： | 2013 |
| 類別： |
期刊論文
IEEE Journal of Lightwave Technology
|
| 摘要： | This study presents a cost-effective method of
producing SiN nanopillars on the surfaces of GaN LEDs to
enhance light extraction using successive ionic layer adsorption and reaction (SILAR). The size and density distribution of ZnO nanoparticles deposited on SiN can be controlled by altering the ratio of water and ethylene glycol during SILAR. The nanoparticles are then used as an etching mask during ICP etching of the SiN film. Compared to traditional GaN-based LEDs, the proposed LEDs with SiN nanopillars increased light output power by 7.5%–15.2% at 20 mA. This improvement can be attributed mainly to a reduction in Fresnel reflection and increased scattering
caused by the addition of SiN nanopillars across the emission surface of GaN LEDs. |
| 關鍵字： | SiN Nanopillars, GaN-Based LED, Light-Extraction Efficiency |
| 著作名稱： | Highly Transparent nano-needle ZnO prepared by successive ionic layer adsorption and reaction method |
| 年度： | 2013 |
| 類別： |
期刊論文
Integrated Ferroelectrics
|
| 摘要： | In this study, well-aligned ZnO nano-needle arrays were synthesized on glass substrates using the two-step successive ionic layer adsorption and reaction (SILAR) method in ethylene glycol. The ZnO seed layer was first formed at a low temperature (95°C), and the subsequent growth of highly oriented nano-needle arrays occurred at a higher temperature (145°C). Growing the seed layer at 95°C led to the formation of separated needle-like nanostructures instead of inseparable rod-shape structures. The ZnO nano-needle arrays crystallized along the c-axis with a Wurtzite hexagonal structure. The optical transmittance of the nano-needle arrays was greater than 90% in the visible spectrum. The band gap of 3.38 eV corresponds to that of as-grown ZnO nano-needle arrays. Due to the simplicity, time-efficiency, and low-temperature processes involved in the two-step SILAR method, it is a promising fabrication technique for highly transparent ZnO nano-needle arrays. |
| 關鍵字： | transparent, ZnO, nano-needle arrays. |
| 著作名稱： | Synthesis of CZTSe Nanocrystal Prepared by a Facile Route in Coordinating Solvent From Elemental Sources |
| 年度： | 2013 |
| 類別： |
期刊論文
IEEE Transactions on Nanotechnology
|
| 摘要： | This paper reports the preparation of Cu2ZnSnSe4
(CZTSe) nanocrystals from elemental sources through the application of various coordinating solvents. The CZTSe nanocrystals were synthesized by mixing metals in oleylamine (OLA) and isophorondiamine (IPDA) at a ratio of 1:3 as well as a Se solution in trioctylphosphine (TOP) under N2 flow at atmospheric pressure at a reaction temperature of 235 ?C. X-ray diffraction and Raman spectroscopy were used to track the reaction mechanisms
associated with various solvents. A growth mechanism, distinct from that associated with TOP/OLA, promoted the formation of nanoparticles and improved the reactivity provided by the addition of IPDA solvent through double N-chelation. The reaction mechanism involved in stannite Cu2ZnSnSe4 phase crystallization from Cu2 SnSe3 and ZnSe is supported by theoretical analysis. The monodispersed CZTSe nanocrystals are polycrystalline and 20–30 nm in size. Optical measurements revealed a direct band gap of 1.42 eV. This study presents a relatively simple, low cost coordinating solvent route for the synthesis of CZTSe nanoparticles, applicable to the fabrication of low-cost thin-film solar cells.) |
| 關鍵字： | Coordinating solvent, CZTSe, elemental sources, |
| 著作名稱： | Optical and Structural Properties of Titanium Dioxide Films from TiO2 and Ti3O5 Starting Materials Annealed at Various Temperatures |
| 年度： | 2013 |
| 類別： |
期刊論文
Advances in Materials Science and Engineering
|
| 摘要： | We investigated the optical and structural properties of titanium dioxide films deposited from Ti3O5 and TiO2 starting materials by electron beam evaporation at annealing temperatures from 400°C to 800°C. We find that the efractive index of as-deposited films from Ti3O5 starting material is higher than that of as-deposited films from TiO2 starting material. In addition, during thermal annealing, the refractive index fluctuates slightly as compared with TiO2 films from TiO2 starting material.This should be attributed to the fact that the deposited molecules had a higher acking density, such that the film was denser.The transmittance spectra of TiO2 films from Ti3O5 starting material indicate that transmittance edge slightly shifts to longer wavelength with the annealing temperature increasing when compared with , in which the transmittance spectra indicate that the transmittance edge strongly shifts to longer wavelength with the same annealing temperature increasing.These findings should be attributed to the absence of oxygen and of scattering rough surface. |
| 關鍵字： | TiO2, starting material, transmittance |
| 著作名稱： | SILAR-Based Application of Various Nanopillars on GaN-Based
LED to Enhance Light-Extraction Efficiency |
| 年度： | 2013 |
| 類別： |
期刊論文
Journal of Nanomaterials
|
| 摘要： | We reported the various nanopillars on GaN-based LED to enhance light-extraction efficiency prepared by successive ionic layer adsorption and reaction method (SILAR). Indium tin oxide (ITO) with thickness of 1 ??m as transparent contact layer was grown to improve the electrical characteristics of the LEDs, including series resistance and operating voltage. SILAR-deposition ZnO nanoparticles on SiO2 were used as etching nanomasks. Multiple nanopillars were simultaneously formed on overall surfaces of ITO p- and n-GaN by ICP etching. The proposed GaN-based LEDs with nanopillars increase light output power by 7%–20.3% (at
20 mA) over that of regular GaN-based LEDs. The difference in light output power can be attributed to differences in materials and shapes of nanopillars, resulting in a reduction in Fresnel reflection by the roughened surface of GaN-based LEDs. |
| 關鍵字： | nanopillars, light output power, Fresnel reflection |
| 著作名稱： | Effect of temperature on the deposition of ZnO thin films by successive ionic layer adsorption and reaction |
| 年度： | 2012 |
| 類別： |
期刊論文
Applied Surface Science
|
| 摘要： | In this study, ZnO thin films were deposited on glass substrates by the successive ionic layer adsorption
and reaction (SILAR) method, and the effect of the temperature treatment in ethylene glycol on the crystal
structure, surface morphology, and optical properties of the films were investigated. When the temperature
was below 85 C, the ZnO films showed poor optical transmission and had a rough surface crystal
structure. As the temperature was increased, dense polycrystalline films with uniform ZnO grain distribution
were obtained. The optical transmittance of the ZnO thin films fabricated at temperatures greater
than 95 ?C was very high (90%) in the visible-light region. Therefore, it could be concluded that increasing
the temperature of treatment in ethylene glycol helps in obtaining fine-grained ZnO films with a high
growth rate and a low concentration of oxygen vacancies. However, temperatures greater than 145 ?C
led to shedding of from the surface and a reduction in the growth rate. Thus, temperature treatment
was confirmed to play an important role in ZnO film deposition instead of after
the film growth. |
| 關鍵字： | SILAR, ZnO,post thermal annealing, ethylene glycol |
| 著作名稱： | Investigation of Ni/Ag contact to p-GaN with an O2 plasma treatment and its application to GaN-based LEDs |
| 年度： | 2012 |
| 類別： |
期刊論文
Phys. Status Solidi A
|
| 摘要： | In this paper, the contact structure of Ni–Ag/p-GaN with
differentO2 plasma treatment times for 1 and 5min was utilized for investigation. From experimental results, the Ni–Ag contact to p-GaN with different O2 plasma treatment for 1 and 5min reveals Schottky behaviors. Based on the variation of the specific contact resistance with espect to temperature, the dominant transport mechanism of Ni–Ag/p-GaN structure presented form thermionic emission to field emission as increasing time from 1 to 5 min. From the X-ray photoelectron spectroscopy (XPS) results, the increase of the N vacancies and antisite defects (ON) would enhance the resistance of the treated p-GaN underneath the contact, which would make the Ni–Ag/p-GaN contact reveal Schottky behavior. With a 20mA current injection, the operation voltage of light-emitting diodes
(LEDs) with Ni/Ag contact to p-GaN through O2 plasma
treatment-400 W–5 min was 3.13V larger than the LEDs
with Ni/Ag contact to p-GaN through O2 plasma treatment-
400 W–1 min. This is due to the larger specific contact
resistance. The 3.13V operation voltage is still good and
acceptable. Furthermore, the largest output power among all
devices can be achieved. Besides, the reliability is still good. |
| 關鍵字： | GaN, LEDs, Ni–Ag, plasma treatment |
| 著作名稱： | S.C.Shei*(corresponding author), H.M.Lo, W.C.Lai, W. C.Lin and S. J. Chang "GaN-based LEDs with air voids prepared by laser scribing and chemical etching"IEEE Photonics Technology Letters, Vol.23, No.16, pp.1172-1174 AUG 2011(SCI IF:1.851) |
| 年度： | 2011 |
| 類別： |
期刊論文
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| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Shih-Chang Shei* (corresponding author), Shoou-Jinn Chang, and Pay-Yu Lee, “Rinsing Effects on Successive Ionic Layer Adsorption and Reaction Method for Deposition of ZnO Thin Films” Journal of The Electrochemical Society, 158 (3) 1, Jan. 2011 (SCI,EI,IF:2.241) |
| 年度： | 2011 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | H. M. Lo, Y. T. Hsieh, S. C. Shei, Y. C. Lee, X. F. Zeng, W. Y. Weng, N. M. Lin, and S. J. Chang, “AlGaInP LEDs Prepared by Contact-Transferred and Mask-Embedded Lithography”, IEEE Journal of Quantum Electronics Vol. 46, No. 12, Dec. 2010 (SCI,EI,IF:3.064) |
| 年度： | 2010 |
| 類別： |
期刊論文
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| 摘要： | |
| 關鍵字： | |
| 著作名稱： | S. J. Chang, W. Y. Weng, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng and S. L. Wu, "GaN Schottky Barrier Photodetectors with a Semi-insulating AlInN Cap Layer", J. Electrochem. Soc., Vol. 157, No. 4, pp. J120-J124, April 2010 (SCI,EI,IF:2.241) |
| 年度： | 2010 |
| 類別： |
期刊論文
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| 摘要： | |
| 關鍵字： | |
| 著作名稱： | L. C. Peng; W. C. Lai; M. N. Chang; T. H. Hsueh; S. C. Shei; J. K. Sheu, “III-Nitride-Based Light-Emitting Diodes With GaN Micropillars Around Mesa and Patterned Substrate”, IEEE Transaction on Electron Devices; Vol. 57, 1 , pp.140-144, Jan. 2010 (SCI,EI,IF:2.445) |
| 年度： | 2010 |
| 類別： |
期刊論文
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| 摘要： | |
| 關鍵字： | |
| 著作名稱： | C. H. Jang; J. K. Sheu; C. M. Tsai; S. J. Chang; W.C. Lai; M. L. Lee; T. K. Ko; C. F. Shen; S. C. Shei, “Improved Performance of GaN-Based Blue LEDs With the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer”, IEEE Journal of Quantum Electronics; Vol.46, 4, pp.513-517, Mar. 2010 (SCI,EI,IF:3.064) |
| 年度： | 2010 |
| 類別： |
期刊論文
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| 摘要： | |
| 關鍵字： | |
| 著作名稱： | W. C. Lai; L. C. Peng; C. C. Chen; J. K. Sheu; S. C. Shei, “AlGaN-based ultraviolet photodetector with micropillar structures,” Applied Physics Letters; Vol.96,10, pp.102104, Mar. 2010 (SCI,EI,IF:3.554) |
| 年度： | 2010 |
| 類別： |
期刊論文
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| 摘要： | |
| 關鍵字： | |
| 著作名稱： | S. C. Shei*(corresponding author), W. C. Lai, J. K. Sheu, I. H. Hung and S. J. Chang, "The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads", Jpn. J. Appl. Phys., Vol. 48, No. 10, Art. no. 102103, October 2009. (SCI,EI,IF:1.138) |
| 年度： | 2009 |
| 類別： |
期刊論文
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| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Li-Chi Peng, Wei-Chih Lai, Ming-Nan Chang, Shih-Chang Shei, and Jinn-Kong Sheu, “GaN-Based LEDs With GaN μ-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads” IEEE Photonics Technol. Lett., Vol. 21, No. 22, pp.1659-1661, Nov. 15, 2009 (SCI,EI,IF:1.815) |
| 年度： | 2009 |
| 類別： |
期刊論文
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| 摘要： | |
| 關鍵字： | |
| 著作名稱： | W. Y. Weng, R. W. Chuang, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng and S. L. Wu, "GaN MSM Photodetectors with a Semi-insulating AlInN Cap Layer and Sputtered ITO Transparent Electrodes", Electrochem. and Solid State Lett., Vol. 12, No. 10, pp. H369-H372, October 2009(SCI,EI,IF:2.241) |
| 年度： | 2009 |
| 類別： |
期刊論文
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| 摘要： | |
| 關鍵字： | |
| 著作名稱： | S. J. Chang, W. S. Chen, S. C. Shei, C. F. Shen, T. K. Ko, J. M. Tsai, W. C. Lai, J. K. Sheu, A. J. Lin, and S. C. Hung, “GaN-Based Power Flip-Chip LEDs With Cu Submount” IEEE Journal of Quantum Electronics, VOL. 15, NO. 4, pp.1287-1291, Jul./Aug. 2009 (SCI,EI,IF:3.064) |
| 年度： | 2009 |
| 類別： |
期刊論文
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| 摘要： | |
| 關鍵字： | |
| 著作名稱： | S. J. Chang, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai, W. C. Lai, J. K. Sheu and A. J. Lin, "High-Brightness InGaN-GaN Power Flip-Chip LEDs", IEEE/OSA J. Lightwave Technol., Vol. 27, No. 12, pp. 1985-1989, June 2009. (SCI,EI,IF:2.185) |
| 年度： | 2009 |
| 類別： |
期刊論文
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| 摘要： | |
| 關鍵字： | |
| 著作名稱： | W. C. Lai; L. C. Peng; M. N. Chang; S. C. Shei; Y. P. Hsu; J. K. Sheu, “GaN-Based LED with Embedded Microlens-like Structure”, Journal of the Electrochemical Society; Vol.156, 12, pp.H976-H978 Oct. 2009, (SCI,EI,IF:2.241) |
| 年度： | 2009 |
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| 著作名稱： | Wei-Chih Lai; Chen, P.H.; Chang, L.C.; Cheng-Huang Kuo; Jinn-Kong Sheu; Tun, C.J.; Shei, S.C., “GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars”, IEEE Photonics Technology Letters; Vol.21, 18, pp1293-1295 Sep. 2009, (SCI,EI,IF:1.815) |
| 年度： | 2009 |
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| 著作名稱： | W. Y. Weng, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L. Wu and S. C. Hung, “ GaN MSM Photodetectors With a Semi-Insulting Mg-Doped AlInN Cap Layer”, IEEE Photon. Technol., Vol. 21, No. 8, pp.504-506, Apr. 2009 (SCI,EI,IF:1.815) |
| 年度： | 2009 |
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| 著作名稱： | J. K. Sheu, I-Hsiu Hung, W. C. Lai, S. C. Shei and M. L. Lee, “Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads”, Appl. Phys. Lett., Vol.93, 103507, Sep. 2008 (SCI,EI,IF:3.977) |
| 年度： | 2008 |
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| 著作名稱： | S. J. Chang, C. F. Shen, M. H. Hsieh, C. T. Kuo, T. K. Ko, W. S. Chen and S. C. Shei, “Nitride-Based LEDs With a Hybrid Al Mirror+TiO2/SiO2 DBR Backside Reflector” IEEE J. Lightwave Technol., Vol. 26, No. 17 pp. 3131-3136 Sep. 2008 (SCI, EI, IF:2.824) |
| 年度： | 2008 |
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| 著作名稱： | C. H. Chang, J. K. Sheu, C. M. Tsai, S. C. Shei, W. C. Lai and S. J. Chang, “Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs” IEEE Photon. Technol. Lett., Vol. 20, No.13, pp.1142-1144, July 2008 (SCI,EI,IF:2.353) |
| 年度： | 2008 |
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| 著作名稱： | S. J. Chang, W. S. Chen, S. C. Shei,T. K. Ko, C. F. Shen, Y. P. Hsu, C. S. Chang, J. M. Tsai, W. C. Lai, and A. J. Lin, “Highly Reliable High-Brightness GaN-Based Flip Chip LEDs” IEEE Tran. Adv. Packaging, Vol. 30, No. 4, pp.752-757 Nov. 2007 (SCI, EI, IF:1.443) |
| 年度： | 2007 |
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| 著作名稱： | S. C. Shei, J. K. Sheu, and C. F. Shen, “Improved Reliability and ESD Characteristics of Flip-Chip GaN-Based LEDs With Internal Inverse-Parallel Protection Diodes”, IEEE Electron Device Letter., Vol. 28, No. 5, pp. 346-349, May 2007 (SCI,EI,IF:2.716) |
| 年度： | 2007 |
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| 著作名稱： | S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei, and J. K. Sheu, “Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography” Appl. Phys. Lett., Vol.91, 013504, Jul. 2007 (SCI,EI,IF:3.977) |
| 年度： | 2007 |
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| 著作名稱： | J. J. Horng, Y. K. Su, S. J. Chang, W. S. Chen and S. C. Shei, “GaN-Based Power LEDs With CMOS ESD Protection Circuits”, IEEE Tran. Dev. Mater. Reliab., Vol. 7, No. 2, pp. 340-346, June 2007 (SCI,EI,IF:1.373) |
| 年度： | 2007 |
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| 著作名稱： | J. J. Horng, Y. K. Su, S. J. Chang, T. K. Ko and S. C. Shei, “Nitride-Based Schottky Barrier Sensor Module With High Electrostatic Reliability”, IEEE Photon. Technol. Lett., Vol. 19, No. 10, pp. 717-719, May 2007 (SCI,EI,IF:2.353) |
| 年度： | 2007 |
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| 著作名稱： | S. J. Chang, T. K. Ko, J. K. Sheu, S. C. Shei, W. C. Lai, Y. Z. Chiou, Y. C. Lin, C. S. Chang, W. S. Chen, and C. F. Shen, “AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates”, Sensors and Actuators A: Physical, Vol. 135, No. 2, pp. 502-506. Jan. 2007 (SCI,EI,IF:1.143) |
| 年度： | 2007 |
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| 著作名稱： | C. F. Shen, S. J. Chang, W. S. Chen, W. S. Chen, T. K. Ko, C. T. Kuo, and S. C. Shei, “Nitride-Based High-Power Filp-Chip LED With Double-Side Patterned Sapphire Substrate”, IEEE Photon. Technol. Lett., Vol. 19, No. 10, pp. 780-782, May 2007 (SCI,EI,IF:2.353) |
| 年度： | 2007 |
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| 著作名稱： | C. F. Shen, S. C. Chang, T. K. Ko, S. C. Shei, W. C. Lai, C. S. Chang, W. S. Chen, S. P. Hung, Y. W. Ku, and R. H. Horng, “Nitride-based high power flip-chip near-UV LEDs with reflective submount”, IET Optoelectron., Vol. 1, No. 1 pp. 27-30. June 2007 (SCI,EI,IF:0.632) |
| 年度： | 2007 |
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| 著作名稱： | S. J. Chang, C. F. Shen, W. S. Chen, T. K. Ko, C. T. Kuo, K. H. Yu, S. C. Shei, and Y. Z. Chiou, “Nitride-Based LEDs with an Insulating SiO2 Layer Underneath p-Pad Electrodes”, Electrochemical and Solid-State Lett., Vol. 10, No. 6, pp. H175-H177. Mar. 2007 (SCI,EI,IF:1.163) |
| 年度： | 2007 |
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| 著作名稱： | C. F. Shen, S. J. Chang, T. K. Ko, C. T. Kuo, S. C. Shei, W. S. Chen, C. T. Lee, C. S. Chang and Y. Z. Chiou, “Nitride-Based Light Emitting Diodes With Textured Sidewalls and Pillar Waveguides”, IEEE Photon. Technol. Lett., Vol. 18, No. 23, pp. 2517-2519, December 2006 (SCI,EI,IF:2.353) |
| 年度： | 2006 |
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| 著作名稱： | S. J. Chang, C. F. Shen, S. C. Shei, R. W. Chung, S. C. Chang, W. S. Chen T. K. Ko, and J. K. Sheu, “Highly Reliable Nitride-Based LEDs With Internal ESD Protection Diodes”, IEEE Tran. Dev. Mater. Reliab., Vol. 6, No. 3 pp. 442-447, September 2006 (SCI,EI.IF:1.373) |
| 年度： | 2006 |
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| 著作名稱： | T. K. Ko, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, J. K. Sheu, W. C. Lai, Y. C. Lin, W. S. Chen, and C. F. Shen, “Nitride-Based Flip-Chip p-i-n Photodiodes”, IEEE Tran. Adv. Packaging, Vol. 29, No. 3, pp. 483-487, August 2006 (SCI,EI,IF:1.443) |
| 年度： | 2006 |
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| 著作名稱： | T. K. Ko, S. J. Chang, J. K. Sheu, S. C. Shei, Y. Z. Chiou, M. L. Lee, C. F.Shen, S. P. Chang and K. W. Lin, (2006), "AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers", Semicond. Sci. Technol., Vol. 21, No. 8, pp. 1064-1068. (SCI) |
| 年度： | 2006 |
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| 著作名稱： | S. J. Chang, W. S. Chen, Y. K. Su, C. S. Chang, Y. C. Lin, T. K. Ko, Y. P. Hsu, C. F. Shen, J. M. Tsai and S. C. Shei, (2006), “Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors” IEEE Tran. Adv. Packaging, Vol. 29, No. 3, pp. 403-408. (SCI) |
| 年度： | 2006 |
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| 著作名稱： | C. M. Tsai, J. K. Sheu, P. T. Wang, S. C. Shei, S. J. Chang, C. H. Kuo, C. W. Kuo and Y. K. Su, (2006), "High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD", IEEE Photon. Technol. Lett., Vol. 18, No. 11, pp. 1213-1215. (SCI) |
| 年度： | 2006 |
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| 著作名稱： | W. S. Chen, S. C. Shei, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu and C. F. Shen, (2006), "Rapid thermal annealed InGaN/GaN flip-chip LEDs", IEEE Tran. Electron. Dev., Vol. 53, No. 1, pp. 32-37. (SCI) |
| 年度： | 2006 |
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| 著作名稱： | S. J. Chang, T. K. Ko, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, J. K. Sheu, W. C. Lai, Y. C. Lin, W. S. Chen and C. F. Shen, (2006), “GaN-based p-i-n sensors with ITO contacts”, IEEE Sensors Journal, Vol. 6, No. 2, pp. 406-411. (SCI) |
| 年度： | 2006 |
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| 著作名稱： | T. K. Ko, S. C. Shei, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, C. S. Chang, W. S. Chen, C. K. Wang, J. K. Sheu, and W. C. Lai, (2006), “Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrow-band UV-A photo sensors”, IEEE. Sensors Journal. Vol.6, pp964-969. (SCI) |
| 年度： | 2006 |
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| 著作名稱： | T. K. Ko, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, J. K. Sheu, W. C. Lai, Y. C. Lin, W. S. Chen, and C. F. Shen, (2006), “Nitride-based flip-chip p-i-n photodiodes”, IEEE Tran. Adv. Packaging, Vol. 29, No. 3, pp. 483-487. (SCI) |
| 年度： | 2006 |
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| 著作名稱： | T. K. Ko, S. J. Chang, Y. K. Su, M. L. Lee, C. S. Chang, Y. C. Lin, S. C. Shei, J. K. Sheu, W. S. Chen, and C. F. Shen , (2005) “AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers”, Journal of Crystal growth Vol.283,pp.68-71. (SCI) |
| 年度： | 2005 |
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| 著作名稱： | Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. H. Kuo, C. S. Chang and S. C. Shei, (2005), "ICP etching of sapphire substrates", Optical Mater., Vol. 27, No. 6, pp. 1171-1174. (SCI) |
| 年度： | 2005 |
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| 著作名稱： | C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei and H. M. Lo, (2005), “Nitride based Power Chip with ITO p-Contact and Al back-side Reflector”, Jpn. J. Appl. Phys., Vol. 44, Part 1, No. 4B, pp.2462-2464. (SCI) |
| 年度： | 2005 |
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| 著作名稱： | W. S. Chen, S. J. Chang, Y. K. Su, R. L. Wang, C. H. Kuo and S. C. Shei, (2005) , “AlxGa1-xN/GaN teterostructure field effect transistors with various Al mole fraction in AlGaN barrier”, J. Crystal Growth, Vol.275, pp.398-403. (SCI) |
| 年度： | 2005 |
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| 著作名稱： | S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, and J. K. Sheu, (2004) , “Nitride-Based LEDs With an SPS Tunneling Contact Layer and an ITO Transparent Contact”, IEEE Photon. Technol. Lett., Vol. 16, No. 4, pp. 1002-1004. (SCI) |
| 年度： | 2004 |
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| 著作名稱： | C. S. Chang, S. J. Chang, Y. K. Su, Y. C. Lin, W. C. Lai, S. C. Shei, J. C. Ke and H. M. Lo, (2004), “Nitride-Based LEDs With Textured Side Walls”, IEEE Photon. Technol. Lett., Vol. 16, No. 3, pp. 750-752. (SCI) |
| 年度： | 2004 |
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| 著作名稱： | Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. T. Lee, T. C. Wen, L. W. Wu, C. H. Kuo, C. S. Chang and S. C. Shei, (2004), “Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs”, J. Crystal Growth., Vol 261, pp.466-470. (SCI) |
| 年度： | 2004 |
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| 著作名稱： | S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, and J. C. Ke, (2003), “Highly Reliable Nitride-Based LEDs With SPS+ITO Upper Contacts”, IEEE Journal of Quantum Electronics, Vol. 39, No. 11, pp. 1439-1443. (SCI) |
| 年度： | 2003 |
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| 著作名稱： | S. J. Chang, Y. K. Su, Y. C. Lin, R. W. Chuang, C. S. Chang, J. K. Sheu, T. C. Wen, S. C. Shei, C. W. Kuo, and D. H. Fang, (2003), “MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates”, Phys. Stat. Sol. (C), No.7, pp. 2227-2231. (SCI) |
| 年度： | 2003 |
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| 著作名稱： | C. S. Chang, S. J. Chang, 1, Y. K. Su, W. C. Lai, C. H. Kuo, C. K. Wang, Y. C. Lin, Y. P. Hsu, S. C. Shei, H. M. Lo, J. C. Ke, and J. K. Sheu, (2003), “High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode”, Phys. Stat. Sol. (C), No.7, pp. 2253-2256. (SCI) |
| 年度： | 2003 |
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| 著作名稱： | C. S. Chang, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, Y. C. Lin, Y. P. Hsu, S. C. Shei, J. M. Tsai, H. M. Lo, J. C. Ke, and J. K. Sheu, (2003) “High Brightness InGaN Green LEDs With an ITO on n++-SPS Upper Contact”, IEEE Trans Electron. Dev., Vol. 50, No. 11, pp. 2208-2212. (SCI) |
| 年度： | 2003 |
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| 著作名稱： | S. J. Chang, Y. C. Lin, Y. K. Su, C. S. Chang, T. C. Wen, S. C. Shei, J. C. Ke, C. W. Kuo, S. C. Chen and C. H. Liu, (2003), “ Nitride-based LEDs fabricated on patterned sapphire substrates”, Solid State Electron, Vol. 47, pp. 1539-1542. (SCI) |
| 年度： | 2003 |
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| 著作名稱： | Y. C. Lin, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei, J. C. Ke, H. M. Lo, S. C. Chen and C. W. Kuo, (2003), ”High power nitride based light emitting diodes with Ni/ITO p-type contacts”, Solid State Electron, Vol. 47, pp. 1565-1568. (SCI) |
| 年度： | 2003 |
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| 著作名稱： | C. S. Chang, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, Y. P. Hus, S. C. Shei, J. C. Ke, H. M. Lo, S. C. Chen and C. H. Liu, (2003), “InGaN/GaN light emitting diodes with rapid thermal annealed Ni/ITO p-contacts”, Jpn. J. Appl. Phys. Vol. 42 pp. 3324–3327 Part 1, No. 6A. (SCI) |
| 年度： | 2003 |
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| 著作名稱： | C. S. Chang, S. J. Chang, Y. K. Su, Y. C. Lin, Y. P. Hsu, S. C. Shei, S. C. Chen, C. H. Liu and U. H. Liaw, (2003), “InGaN/GaN light emitting diodes with ITO p-contact layers prepared by RF sputtering”, Semicond. Sci. Technol. Vol. 18, L1–L3. (SCI) |
| 年度： | 2003 |
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| 著作名稱： | Y. C. Lin, S. J. Chang, Y. K. Su, T.Y. Tsai, C. S. Chang, S. C. Shei, C. W. Kuo and S. C. Chen, (2003), “InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts”, Solid State Electron, Vol. 47, pp. 849-853. (SCI) |
| 年度： | 2003 |
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| 著作名稱： | Y. C. Lin a, S. J. Chang a, Y. K. Su, S. C. Shei and S. J. Hsu, (2002), “Inductively coupled plasma etching of GaN using Cl2/He gases”, Materials Science and Engineering B98 pp. 60-64. (SCI) |
| 年度： | 2002 |
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| 著作名稱： | Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, S. J. Hsu, C. H. Liu, U. H. Liaw, S. C. Chen, and B. R. Huang, (2002), “Nitride-Based Light-Emitting Diodes With Ni/ITO p-Type Ohmic Contacts”, IEEE Photon. Technol. Lett., Vol. 14, No. 12, pp. 1668-1670. (SCI) |
| 年度： | 2002 |
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| 著作名稱： | Y. P. Hsu, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei. Y. C. Lin, C. H. Kuo, L. W. Wu and S. C. Chen, (2002), "InGaN/GaN light emitting diodes with a reflector at the backside of sapphire substrates", J. Electron. Material Vol. 32, No. 5, pp. 403-405. (SCI) |
| 年度： | 2002 |
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| 著作名稱： | J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang and G. C. Chi, (2001), "Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer", IEEE Electron. Dev. Lett., Vol. 22, No. 10, pp. 460-462. (SCI) |
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| 著作名稱： | S. C. Shei, Y. K. Su, C. J. Hwang, and M. Yokoyama, (1995), “SiO2/InP structure prepared by direct photo-chemical vapor deposition using deuterium lamp and its applications to metal-oxide-semiconductor field-effect transistor,”Jpn. J. Appl. Phys., Vol.34, No2, pp.476-481. (SCI) |
| 年度： | 1995 |
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期刊論文
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| 著作名稱： | S. C. Shei, Y. K. Su, C. J. Hwang, and M. Yokoyama, (1995), “Compositional and electrical properties of Si metal-oxide-semiconductor structure prepared by direct photo-enhanced chemical vapor deposition using deuterium lamp,”J. Vac. Sci.Technol. A, Vol.13, No.2, pp.237-243. (SCI) |
| 年度： | 1995 |
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期刊論文
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| 著作名稱： | Y. Z. Juang, Y. K. Su, S. C. Shei, and B. C. Fang, (1994), “Comparing reactive ion etching of Ⅲ-Ⅴ compounds in Cl2/BCl3/Ar and CCl2F2/BCl3/Ar discharges,” J. Vac. Sci. Technol. A, Vol.12, No.1, pp.75-82. (SCI) |
| 年度： | 1994 |
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期刊論文
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| 著作名稱： | Y. K. Su, Y. Z. Jung, S. C. Shei, and B. C. Fang, “A study of selective and nonselective reactive ion etching of GaAs/AlGaAs Materials, (1993),” Solid State Electronics, Vol.36, No.12, pp.1779-1785, (1993). (SCI) |
| 年度： | 1993 |
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期刊論文
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| 著作名稱： | Y. K. Su, S. C. Shei, and C. H. Chen, (1992), “Low-frequency noise in InP-based double hetrojunction bipolar transistors,” Appl. Phys. Lett., Vol.61, No.13,pp.1756-1758. (SCI) |
| 年度： | 1992 |
| 類別： |
期刊論文
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| 著作名稱： | Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography |
| 年度： | 2010 |
| 類別： |
期刊論文
Superlattices and Microstructures
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| 摘要： | The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of InGaAlP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.24 and 2.25 V for CMEL-400 nm LED, CMEL-2 mm LED and the conventional LED without CMEL, respectively. It was also found that the 20 mA output powers were 1.43, 1.28 and 1.16 mW for CMEL-400 nm LED, CMEL-2 mm LED and the conventional LED without CMEL,respectively. |
| 關鍵字： | Nanoimprint,InGaAlP, light-emitting diodes |
| 著作名稱： | IGZO/ZTO TFTs with Modulated Double Channel of Thickness Structures |
| 年度： | 2021 |
| 類別： |
期刊論文
Journal of Mechanics Engineering and Automation
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| 摘要： | The device characteristics of IGZO/ZTO (indium-gallium-zinc oxide/zinc-tin oxide) TFTs (thin film transistors) with
modulated channels were investigated. The field effect mobility was enhanced to 20.4 cm2 /Vs in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at appropriate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure. |
| 關鍵字： | IGZO, ZTO, double insulating layer, double channel layer. |
| 著作名稱： | S. C. Shei, C. S. Chang, S. J. Chang, Y. K. Su, “High Brightness InGaN/GaN LEDs with ESD Protection “, 2005 International Conference on Solid State Devices and Materials, 2005 SSDM. |
| 年度： | 2005 |
| 類別： |
會議論文
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| 著作名稱： | C. S. Chang, S. J. Chang, Y. K. Su, C. F. Shen, W. S. Chen, T. K. Ko, H. M. Lo, S. C. Shei and T. M. Kuo, “Nitride-based Light Emitting Diodes With Electrostatic Discharge Protection”, 6th Topical Workshop on Heterostructure Microelectronics, 2005 TWHM. |
| 年度： | 2005 |
| 類別： |
會議論文
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| 著作名稱： | C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei and H. M. Lo, “Nitride based Power Chip with ITO p-Contact and Al back-side Reflector”, 2004 International Conference on Solid State Devices and Materials, 2004 SSDM. |
| 年度： | 2004 |
| 類別： |
會議論文
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| 著作名稱： | C. S. Chang, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, C. K. Wang, Y. C. Lin, Y. P. Hsu, S. C. Shei, H. M. Lo, J. C. Ke, and J. K. Sheu, “High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode”, 2003 International Conference on Nitride Semiconductors, 2003 ICNS-5. |
| 年度： | 2003 |
| 類別： |
會議論文
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