| 著作名稱： | Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-well Structures with Silicon Doping |
| 年度： | 2006 |
| 類別： |
學術專書
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Wide range variation of resonance wavelength of GaZnO plasmonic metamaterials grown by molecular beam epitaxy with slight modification of Zn effusion cell temperatures |
| 年度： | 2021 |
| 類別： |
期刊論文
Journal of Alloys and Compounds
|
| 摘要： | The innovative growth condition of heavily Ga-doped ZnO (GaZnO) plasmonic metamaterials is reported in this article. GaZnO epilayers are deposited by molecular beam epitaxy (MBE) with small variation of Zn effusion cell temperatures. The variation of Zn effusion cells temperatures are 330, 335, and 340 °C corresponding to Ga doping concentration 6.8, 6.3, and 3.2 at%, respectively, which are obtained from the measurements of energy-dispersive X-ray spectroscopy (EDX). Temperatures of Ga effusion cell and sapphire substrate are fixed at 735 and 250 °C in the growth. Hall effect measurements exhibiting free electron concentration of all samples approach 1021 cm−3. The lowest strain/stress (0.08%/0.34 GPa), the largest crystalline size (47.5 nm), the highest Hall mobility (30.1 cm2/Vs), and the lowest material loss of GaZnO epilayers are observed in Ga doping concentration 6.3 at% sample. Statistical analysis of root mean square (RMS) surface roughness declines from 3.1 to 1.74 nm in the atomic force microscope (AFM) measurements when the doping is increased from 3.2 to 6.8 at%. Wide range variation of plasmonic resonance wavelength from 1333 to 1515 nm with the raise of Ga doping concentration is acquired through the analysis of spectroscopic ellipsometry measurements. Slight variations of Zn effusion cell temperatures in the range of 330–340 °C bring about efficient and drastic change of Ga doping concentration as well as wide range variation of plasmonic resonance wavelength (1333–1515 nm) for the applications in fiber-optic communication. |
| 關鍵字： | Ga-doped zinc oxide, Molecular beam epitaxy, Plasmonic resonance wavelength, Effusion cell temperatures |
| 著作名稱： | Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition |
| 年度： | 2020 |
| 類別： |
期刊論文
Nanoscale Research Letters
|
| 摘要： | Characteristics of atomic layer deposition (ALD)-grown ZnO thin films on sapphire substrates with and without
three-pulsed ozone (O3) as oxidant precursor and post-deposition thermal annealing (TA) are investigated.
Deposition temperature and thickness of ZnO epilayers are 180 °C and 85 nm, respectively. Post-deposition thermal
annealing is conducted at 300 °C in the ambience of oxygen (O2) for 1 h. With strong oxidizing agent O3 and postdeposition TA in growing ZnO, intrinsic strain and stress are reduced to 0.49% and 2.22 GPa, respectively, with
extremely low background electron concentration (9.4 × 1015 cm−3). This is originated from a lower density of
thermally activated defects in the analyses of thermal quenching of the integrated intensity of photoluminescence
(PL) spectra. TA further facilitates recrystallization forming more defect-free grains and then reduces strain and stress
state causing a remarkable decrease of electron concentration and melioration of surface roughness. |
| 關鍵字： | Zinc oxide, Atomic layer deposition, Strain relaxation, Ozone precursor, Thermal annealing, Photoluminescence |
| 著作名稱： | Film thickness dependence of surface plasmon resonance behavior at a grating structure of highly Ga-doped ZnO |
| 年度： | 2020 |
| 類別： |
期刊論文
Physica Status Solidi (a)
|
| 摘要： | Grating structures of the same grating period and similar ridge widths and heights are fabricated at the air interface of highly Ga-doped ZnO (GaZnO) thin films of different thicknesses for studying the different resonance behaviors of induced surface plasmon (SP) polariton and localized SP in the near-IR range. The wavelengths of those SP resonance modes obtained via the reflection and transmission measurements from the air and substrate sides are compared for observing the effects of the GaZnO/substrate interface on the behaviors of the SP resonances induced around the grating structures. With the refractive index of the sapphire substrate around 1.75, the resonance wavelengths of the SP modes induced in a sample of a smaller GaZnO film thickness generally become longer. This variation trend can be clearly observed in the reflection measurement from the sapphire side. Therefore, the SP resonance wavelengths of a GaZnO grating structure can be controlled by the refractive index of the used substrate as long as the GaZnO layer is not too thick (roughly thin than 200 nm). |
| 關鍵字： | localized surface plasmon, plasmonic materials, surface plasmon polariton, transparent conducting oxides |
| 著作名稱： | Fast real-space imaging of the exciton complexes in WSe2 and WS2 monolayers using multiphoton microscopy |
| 年度： | 2020 |
| 類別： |
期刊論文
The Journal of Physical Chemistry C
|
| 摘要： | Two-dimensional transition metal dichalcogenides possess unprecedentedly strong optical nonlinear properties associated with exciton complexes, which are highly promising for developing novel optoelectronics and nanophotonics. In this work, we investigate various exciton complexes that exist in WSe2 and WS2 triangular monolayers, through second-harmonic generation (SHG) and two-photon excited photoluminescence (2P-PL) images that are generated rapidly by multiphoton laser scanning microscopy. These large-scale images taken at different photon energies reveal the spatial distribution of the exciton complexes. The SHG images capture the exciton and trion resonances but not the biexciton resonance, despite a prominent biexciton signature in 2P-PL. The peculiar absence of biexciton signature is explained using time-dependent perturbation theory. SHG can also resonate with the band nesting states to produce images with high contrast, which is out of reach in conventional PL. By analyzing the crystal structure and growth dynamics of WS2 monolayers using a high-angle annular dark-field scanning transmission electron microscope, we further establish the link between the oxidized triangular holes induced by S atom vacancies and the formation of biexcitons at the triangle edges. This newfangled approach using multiphoton microscopy shows that the spatial characteristics and excitation energy dependence of the exciton complexes are crucial for a deep understanding of the interactions between excitons and charged carriers and the twodimensional materials in general. |
| 關鍵字： | |
| 著作名稱： | Surface Characterization and Tribological Behavior of Graphene-Reinforced Cellulose Composites Prepared by Large-Area Spray Coating on Flexible Substrate |
| 年度： | 2020 |
| 類別： |
期刊論文
Coatings
|
| 摘要： | A large-area spray coating process is introduced to efficiently apply a graphene/Cu/cellulose composite on a flexible glass substrate. The dispersion characteristics of nano-additives are measured and the Tyndall effect observed. The characteristics of the composite coating such as the film thickness, surface roughness, water contact angle, and lubricating characteristics are measured. The tribological properties of the composite coating are measured using a ball-on-disk. The wear width of the abrasive parts, as well as the wear and friction coefficient of the grinding balls, are investigated. Adding graphene/Cu helps to improve the anti-wear ability of cellulose. The transfer layer was observed using the Raman spectroscopy andmapping technology. Finally, the lubricatingmechanismis discussed, and the wear mechanism is proposed. Nanoparticles existed in the wear track as the third-body particles and improved the load capacity of the composites. The wearmechanismof the composites is discussed in terms of the worn surfaces and the analysis of the transfer film with the third-body approach. |
| 關鍵字： | tribology; wear; graphene; cellulose; large area; spray coating; flexible substrate |
| 著作名稱： | Surface plasmon resonance behaviors of a highly Ga-doped ZnO nano-grating |
| 年度： | 2019 |
| 類別： |
期刊論文
Optical Materials Express
|
| 摘要： | Surface nano-gratings of different periods are fabricated on a Ga-doped ZnO (GaZnO) thin film with a high electron concentration for the study of their surface plasmon (SP) resonance behaviors in the near-infrared range. The dispersion curve of the surface plasmon polariton (SPP) based on the ellipsometry measurement of the GaZnO dielectric constant helps in designing the grating period for effective SPP excitation. Spectral depressions of grating reflection under certain incident polarization conditions, corresponding to SP resonance features, are observed in the wavelength range between 1400 and 2200 nm. From the numerical simulation of light scattering from a GaZnO grating structure based on the measured dielectric constant and the fitted Drude model, we can identify either SPP or localized SP modes among the observed SP resonance features. Essentially, it is difficult to excite below 1600 nm SPP at an air/GaZnO interface due to its lossy nature. The potential application of SP resonance on GaZnO is evaluated. |
| 關鍵字： | Surface plasmon, Ga-doped, ZnO, nano-grating |
| 著作名稱： | Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods |
| 年度： | 2017 |
| 類別： |
期刊論文
Optical Materials Express
|
| 摘要： | We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 μm undoped GaN template on top of a (0001)-direction sapphire substrate. A 100 nm SiO2 thin film is deposited on top as a masking pattern layer. This layer is then covered with a 300 nm aluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. After oxalic acid etching, we transfer the hole pattern from the AAO layer to the SiO2 layer by reactive ion etching. Lastly, we utilize metal-organic chemical vapor deposition to grow GaN nanorods approximately 1.5 μm in size. We then grow two layers of InGaN/GaN double quantum wells on the semi-polar face of the GaN nanorod substrate under different temperatures. We then study the characteristics of the InGaN/GaN quantum wells formed on the semi-polar faces of GaN nanorods. We report the following findings from our study: first, using SiO2 with repeating hole pattern, we are able to grow high-quality GaN nanorods with diameters of approximately 80-120 nm; second, photoluminescence (PL) measurements enable us to identify Fabry-Perot effect from InGaN/GaN quantum wells on the semi-polar face. We calculate the quantum wells’ cavity thickness with obtained PL measurements. Lastly, high resolution TEM images allow us to study the lattice structure characteristics of InGaN/GaN quantum wells on GaN nanorod and identify the existence of threading dislocations in the lattice structure that affects the GaN
nanorod’s growth mechanism. |
| 關鍵字： | |
| 著作名稱： | Partially polycrystalline GaN1%xAsx alloys grown on GaAs in the middle composition range achieving a smaller band gap |
| 年度： | 2017 |
| 類別： |
期刊論文
Japanese Journal of Applied Physics
|
| 摘要： | GaN1%xAsx alloys have been successfully grown on (100) GaAs substrates over a wide composition range (0.15 x 0.98) by plasma-assisted molecular beam epitaxy. In the middle composition range, the weak and broad (111) diffraction peaks are observed in the X-ray diffraction patterns. These diffraction peaks most likely come from small crystalline grains within the amorphous matrix and are unlike the entirely amorphous GaNAs alloys grown on sapphire and Pyrex glass. A transmission electron microscopy micrograph of the GaN0.50As0.50 alloy also shows a weak periodic structure consisting of small polycrystalline grains. To study the band gap and the As-affected spin–orbit band to conduction-band minimum transition, photomodulated reflectance is utilized. The band gap energies range from 0.78 to 2.15 eV (3.4 eV for end-point compounds GaN). Finally, the original and modified band anticrossing (BAC) models for GaNAs alloys were thoroughly verified over the entire composition range. Remarkably, the band gap energies of the partially polycrystalline GaNAs alloys agree well with those obtained using the original BAC model in the middle composition range because the model has been developed for crystalline materials. These results improve the growth of highly mismatched GaNAs alloys with different substrates and should expedite studies of high-efficiency multijunction solar cells fabricated using such a single ternary alloy system. |
| 關鍵字： | |
| 著作名稱： | Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 C with three-pulsed precursors per growth cycle |
| 年度： | 2017 |
| 類別： |
期刊論文
Journal of Crystal Growth
|
| 摘要： | ZnO main epilayers are deposited with three-pulsed precursors in every growth cycle at 100 C on various
thicknesses of 300 C-grown homo-buffer layers by atomic layer deposition (ALD) on sapphire substrate.
Samples are treated without and with post-deposition rapid thermal annealing (RTA). Two different
annealing temperatures 300 and 1000 C are utilized in the ambience of oxygen for 5 min. Extremely
low background electron concentration 8.4 1014 cm3, high electron mobility 62.1 cm2/V s, and pronounced
enhancement of near bandgap edge photoluminescence (PL) are achieved for ZnO main epilayer
with sufficient thickness of buffer layer (200 ALD cycles) and post-deposition RTA at 1000 C. Effective
block and remove of thermally unstable mobile defects and other crystal lattice imperfections are the
agents of quality promotion of ZnO thin film. |
| 關鍵字： | |
| 著作名稱： | Optimal silicon doping layers of quantum barriers in the growth sequence forming soft confinement potential of eight periods In0.2Ga0.8N/GaN quantum wells of blue LEDs |
| 年度： | 2017 |
| 類別： |
期刊論文
Nanoscale Research Letters
|
| 摘要： | The features of eight-period In0.2Ga0.8N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five
quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs’
structures are grown on 20 pairs of In0.02Ga0.98N/GaN superlattice acting as strain relief layers (SRLs) on patterned
sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system.
Temperature-dependent photoluminescence (PL) spectra, current versus voltage (I-V) curves, light output power
versus injection current (L-I) curves, and images of high-resolution transmission electron microscopy (HRTEM) of
epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization
energy (41 meV), lower turn-on (3.27 V) and breakdown (− 6.77 V) voltages, and higher output power of light of
blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample
results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM
images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers
among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light
output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that
four QBs of eight In0.2Ga0.8N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE)
but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs. |
| 關鍵字： | |
| 著作名稱： | The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs |
| 年度： | 2016 |
| 類別： |
期刊論文
Journal ofLuminescence
|
| 摘要： | First two to five barriers in the growth sequence having silicon (Si) doping of eight periods In0.2Ga0.8N/GaN quantum wells (QWs) on twenty pairs of In0.02Ga0.98N/GaN superlattice strain relief layers (SRLs) of blue LEDs were prepared by low pressure metal-organic chemical vapor deposition (LPMOCVD) system on patterned sapphire substrates (PSSs). The effect of doping layers on the luminescence properties of QWs of blue LEDs was investigated. For the sample with first four barriers having Si doping, formation of soft confinement of QWs potential and strong carrier localization inside QWs were occurred. There is better spread of carriers among eight QWs and strong radiative recombination of carriers inside QWs. The increase of output power and external quantum efficiency (EQE) is due to decrease of Auger processes, leakage of carriers out of QWs, and nonradiative recombination centers. The consequences demonstrate that first four barriers with Si doping possess the favorable doping condition for eight periods In0.2Ga0.8N/GaN QWs. |
| 關鍵字： | InGaN/GaN quantum wells (QWs) Silicon (Si)doping Soft confinement potential Quantum-confined Stark effect (QCSE) Auger processes External quantum efficiency (EQE) |
| 著作名稱： | 8.13 μm in length and CMOS compatible polarization beam splitter based on an asymmetrical directional coupler |
| 年度： | 2016 |
| 類別： |
期刊論文
Applied Optics
|
| 摘要： | A compact silicon polarization beam splitter (PBS) is proposed based on an asymmetrical directional coupler
consisting of a wide waveguide and a dielectric loaded narrow waveguide. Given that TE and TM polarizations
are the dominant mode in the wide and narrow waveguides, respectively, a perfect phase-matching condition in
the TM mode but a huge phase mismatching in the TE mode can be achieved. Therefore, the TE mode is almost
uncoupled regardless of device length but the TM mode can only completely couple to the cross port at an
appropriate coupling length. An ultrashort (∼8.13 μm long) PBS is designed based on a silicon-on-insulator
nanowire with a loading refractive index of 2.0 and a gap width of 200 nm. Numerical simulations show that
the proposed PBS has a broad bandwidth (∼100 nm) with large extinction ratio (>10 dB) and low insertion loss
(0.61 dB). The fabrication-error tolerance of the PBS is also discussed. |
| 關鍵字： | |
| 著作名稱： | Photoreflectance study of the near-band-edge transitions of chemical vapor deposition grown mono- and few-layer MoS2 films |
| 年度： | 2016 |
| 類別： |
期刊論文
Journal of Applied Physics
|
| 摘要： | Room-temperature photoreflectance (PR) and reflectance (R) spectroscopy are utilized to investigate the near-band-edge transitions of molybdenum disulfide (MoS2) thin films grown on sapphire substrates by a hot-wall chemical vapor deposition system. The layer thickness and optical properties of the MoS2 thin films are confirmed by Raman spectroscopy, atomic force microscope, and photoluminescence (PL) analysis. The B exciton shows relatively weak PL intensity in comparing with the A exciton even for monolayer MoS2 films. In the R spectrum of few-layer MoS2, it is not possible to clearly observe exciton related features. The PR spectra have two sharp, derivative-like features on a featureless background. Throughout the PR lineshape fitting, the transition energies are designated as the A and B excitons at the K-point of the Brillouin zone, but at room temperature there seems to be no distinguishable feature corresponding to an H-point transition for the mono- and few-layer MoS2 films unlike in bulk. These transition energies are slightly larger than those obtained by PL, which is attributed to the Stokes shifts related to doping level. The obtained values of valence-band spin-orbit splitting are in good agreement with those from other experimental methods. By comparing the PR lineshapes, the dominant modulation mechanism is attributed to variations of the exciton transition energies due to change in the built-in electric field. On the strength of this study, PR spectroscopy is demonstrated as a powerful technique for characterizing the near-band-edge transitions of MoS2 from monolayer to bulk. |
| 關鍵字： | |
| 著作名稱： | Ultra compact polarization rotator in an asymmetric single dielectric loaded rib waveguide |
| 年度： | 2016 |
| 類別： |
期刊論文
Applied Optics
|
| 摘要： | A compact polarization rotator (PR) with an asymmetric single dielectric loaded rib waveguide is proposed. The core of the waveguide is designed to have a specific rectangular configuration. The waveguide requires only a single asymmetrical dielectric loading on the core to complete the polarization conversion. The optical field is confined to the vicinity of the core center, which matches the optical field of the input/output waveguides. The transition loss of the PR is as low as 0.03–0.21 dB/facet without the taper or offset schemes. Such results can facilitate the fabrication of a PR with an operating length of 10 μm. In a comprehensively designed PR with a length of 7.92 μm, a −1 dB bandwidth for polarization conversion efficiency (PCE) is greater than 100 nm at the communicating wavelength of 1550 nm. The loading width and thickness with 20 nm tolerance exhibit −0.87 and −0.49 dB changes in PCE, respectively. |
| 關鍵字： | |
| 著作名稱： | ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 C with three-pulsed precursors in every growth cycle |
| 年度： | 2016 |
| 類別： |
期刊論文
Journal of Alloys and Compounds
|
| 摘要： | Zinc oxide (ZnO) thin films are grown at various temperatures from 100 to 180 C by atomic layer deposition (ALD) with three-pulsed precursors per ALD cycle on sapphire (0001) substrates. In the texture analyses of x-ray diffraction (XRD), hexagonal (002) and (101) crystalline orientations are shown. The dominant diffraction is (002) above 140 C and (101) at and below 140 C. Hall effect measurements demonstrate remarkable decrease of free electron concentration below 140 C and the lowest value is 2.4 1016 cm3 at 100 C. Photoluminescence (PL) spectra of samples display no defect-related luminescence band. The emission peak energy of PL spectra show blueshift with the increase of temperature from 100 to 140 C, which is originated from band-filling (BursteineMoss) effect. However, redshift occurred at temperature above 140 C owing to bandgap renormalization (shrinkage) with the increase of free electron concentration. Enhancement of PL peak intensity and reduction of free electron concentration below 140 C result from the large decline of intrinsic donor-like defects. 140 C is a critical temperature for thermal activation of donors-like defects and alteration of dominant crystalline orientation as well as the electrical and optical behaviors in ZnO. The growth method also constitutes smooth surface of ZnO when it comes to the analysis of surface roughness of samples from topographic image forming by atomic force microscope (AFM). |
| 關鍵字： | Zinc oxide thin films Three-pulsed precursors Atomic layer deposition (ALD) Bursteine Moss effect Bandgap renormalization |
| 著作名稱： | The luminescence properties of eight periods In0.2Ga0.8N/GaN multiple quantum wells with silicon doping in the first two to five barriers of blue LEDs |
| 年度： | 2016 |
| 類別： |
期刊論文
International Journal of Science and Engineering
|
| 摘要： | We have been carrying out researches on luminescence properties of first two to five barriers in the growth sequence with silicon (Si) doping of eight periods In0.2Ga0.8N/GaN quantum wells (QWs) and we have published papers in Journal of Luminescence, Vol. 177, pp. 59–64, 2016. This paper provides more information on their properties. Epilayers are grown by low pressure metal-organic chemical vapor deposition (LPMOCVD) system on patterned sapphire substrates (PSSs). For the sample’s QWs containing first four barriers with Si doping, photoluminescence (PL) demonstrates the strongest intensity and relative larger spectral linewidth than other samples. It is originated from the increase of radiative recombination centers due to the effective reduction of quantum confined Stark effects (QCSE) and enhancements of carrier localization inside QWs. Higher output power and external quantum efficiency (EQE) are also shown in this blue LED. Soft confinement among QWs leads to reduction of Auger processes, leakage of carriers out of QWs, and nonradiative recombination centers in this sample. First four barriers with Si doping is the favorable doping condition for eight periods In0.2Ga0.8N/GaN QWs. |
| 關鍵字： | InGaN/GaN quantum wells (QWs), Silicon (Si) doping, Soft confinement potential, Quantum-confined Stark effect (QCSE), Auger processes, External quantum efficiency (EQE) |
| 著作名稱： | Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy |
| 年度： | 2015 |
| 類別： |
期刊論文
Japanese Journal of Applied Physics
|
| 摘要： | Temperature-dependent photoluminescence (PL) and photoreflectance (PR) spectroscopy and room-temperature Raman spectroscopy and X-ray diffraction have been utilized to investigate the optical properties, electron concentration, crystalline quality, and electronic band structures, especially valence-band splittings, of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal–organic chemical vapor deposition (MOCVD). The smaller thermal activation energies imply the PAMBE-grown InN film exhibits low-density localized states from band tail
states. PR signals of the InN film are detectable when the temperature is below about 100K due to the cooling down of free electrons to trap states. For the MOCVD-grown InN film, no PR signal is observed even at 15K due to the higher free electron concentration. To analyze the energetic positions of the features in the PR spectra without ambiguity, the moduli of individual PR resonances are considered. Based on the PR results and appropriate Hamiltonian, the values of the crystal-field splitting and the spin–orbit splitting in InN are experimentally determined as 26.8 and 14.5meV, respectively. Theoretical and experimental reports are compared and discussed to verify this result. |
| 關鍵字： | |
| 著作名稱： | Growing high-quality ternary CdMnTe epilayers by molecular beam epitaxy on Si substrates and its mechanism |
| 年度： | 2015 |
| 類別： |
期刊論文
Journal of Alloys and Compounds
|
| 摘要： | Cd(Mn,Zn)Te-based ternary compound semiconductors with wide band-gaps are important in the detection of radiation and photovoltaic applications. This study characterizes Cd1-xMnxTe epilayers on Si substrates with various Mn compositions grown by molecular beam epitaxy. The surface smoothness, crystallinity and optical quality all are significantly improved with increasing Mn content. The Cd0.61Mn0.39Te epilayer with a thickness of only about 500 nm yields a full width at half maximum of the X-ray rocking curve of 165 arcsec. Photoluminescence spectra at 10 K show that the intensity of defect-related emissions is much lower than that of binary CdTe epilayers, reaching zero from the
samples with high Mn content, while the integral intensity of the exciton-related emissions is increased by more than two orders of magnitude. Raman scattering spectra reveal that the intensity of the TeeTe related defect vibration modes falls significantly as the Mn content increase, even disappearing altogether in the samples with high Mn content. This work proposes that incorporating Mn atoms during epitaxial growth can promote the decomposition of Te2 sources, owing to the high sticking coefficient of Mn and the high cohesive energy of the MneTe bond, and then reduce the number of TeeTe related stacking fault defects, yielding high-quality CdMnTe epilayers. Our results herein demonstrate that the CdMnTe ternary epilayers are much more promising in terms of material quality than the CdZnTe ternary epilayers. |
| 關鍵字： | Ternary CdMnTe epilayer Molecular beam epitaxy Si substrate X-ray diffraction Photoluminescence Raman scattering |
| 著作名稱： | Crack-freeGaNdepositiononSisubstratewithtemperature-gradedAlN buffergrowthandtheemissioncharacteristicsofovergrownInGaN/GaN quantumwells |
| 年度： | 2014 |
| 類別： |
期刊論文
Journal of Crystal Growth
|
| 摘要： | The techniqueofdepositingatemperature-gradedAlNbufferlayerforcrack-freeGaNgrowthonSi
substrateisdemonstrated.Comparedwiththepreviouslyreportedmethodsofbuffergrowth,this
techniquehastheadvantagesofathinnerbufferlayerforeffectivelyproducingcompressivestressand
simple binarygrowthwithouttheneedofchangingitscomposition.Bycombiningwithaninter-layer
structure ofthree-periodGaN/AlNsuperlattice,crack-freegrowthofthickGaNlayersof3.7 μm intotal
thickness isimplemented.Also,thedifferentemissionbehaviorsofovergrownInGaN/GaNquantum
wells (QWs)underdifferentstressconditionswithdifferentgradedtemperaturenumbersareillustrated.
It isfoundthattheQWsamplewiththehighestgradedtemperaturenumberfordepositingtheAlN
buffer hastheweakestresidualtensilestress,theshortestemissionwavelength,theweakestcarrier
localization effect,theweakestquantum-confined Starkeffect,andthehighestinternalquantum
efficiency,eventhoughthetotalindiumcontentisaboutthesameasthoseofothersampleswith
significantly strongerresidualstresses. |
| 關鍵字： | Nanostructures Metalorganic chemical vapor deposition Nitrides Semiconducting III–V materials |
| 著作名稱： | Nanostructure study of the coalescence growth
of GaN columns with molecular beam epitaxy |
| 年度： | 2013 |
| 類別： |
期刊論文
OPTICAL MATERIALS EXPRESS
|
| 摘要： | We investigate the structural properties of molecular-beamepitaxy
coalescence overgrowth of GaN columns at the nanoscale with
transmission electron microscopy and other characterization techniques.
Two samples grown over nanocolumns of different widths and spatial
densities (columns/area) are compared. It is found that columns with a
larger cross section (~500 nm) and correspondingly lower spatial density
normally lead to un-coalesced overgrown domains ranging 5-8 μm in size.
On the other hand, the overgrowth on the columns of a smaller cross section
(~100 nm) and correspondingly higher density results in coalesced domains
ranging from 1 to 5 μm in size. It is believed that among the smaller, more
closely spaced columns the strain distribution resulting from overgrowth is
more effective in leading to the uniformity of crystalline orientation, and
hence successful coalescence. The optical characterization leads to the
conclusion that the defect density in the sample grown on smaller columns
is lower when compared with that grown on larger columns. |
| 關鍵字： | Electro-optical materials; Photonic bandgap materials; Subwavelength structures, nanostructures. |
| 著作名稱： | Nanostructure study of the coalescence growth of GaN columns with molecular beam epitaxy |
| 年度： | 2013 |
| 類別： |
期刊論文
Optical Materials Express
|
| 摘要： | We investigate the structural properties of molecular-beamepitaxy coalescence overgrowth of GaN columns at the nanoscale with transmission electron microscopy and other characterization techniques. Two samples grown over nanocolumns of different widths and spatial densities (columns/area) are compared. It is found that columns with a
larger cross section (~500 nm) and correspondingly lower spatial density normally lead to un-coalesced overgrown domains ranging 5-8 μm in size. On the other hand, the overgrowth on the columns of a smaller cross section (~100 nm) and correspondingly higher density results in coalesced domains ranging from 1 to 5 μm in size. It is believed that among the smaller, more closely spaced columns the strain distribution resulting from overgrowth is more effective in leading to the uniformity of crystalline orientation, and hence successful coalescence. The optical characterization leads to the conclusion that the defect density in the sample grown on smaller columns is lower when compared with that grown on larger columns. |
| 關鍵字： | |
| 著作名稱： | Nanostructure study of the coalescence growth of GaN columns with molecular beam epitaxy |
| 年度： | 2013 |
| 類別： |
期刊論文
Optical Materials Express
|
| 摘要： | We investigate the structural properties of molecular-beamepitaxy coalescence overgrowth of GaN columns at the nanoscale with transmission electron microscopy and other characterization techniques. Two samples grown over nanocolumns of different widths and spatial densities (columns/area) are compared. It is found that columns with a larger cross section (~500 nm) and correspondingly lower spatial density normally lead to un-coalesced overgrown domains ranging 5-8 μm in size. On the other hand, the overgrowth on the columns of a smaller cross section (~100 nm) and correspondingly higher density results in coalesced domains ranging from 1 to 5 μm in size. It is believed that among the smaller, more closely spaced columns the strain distribution resulting from overgrowth is more effective in leading to the uniformity of crystalline orientation, and hence successful coalescence. The optical characterization leads to the conclusion that the defect density in the sample grown on smaller columns is lower when compared with that grown on larger columns. |
| 關鍵字： | GaN, molecular beam epitaxy |
| 著作名稱： | Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing |
| 年度： | 2011 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition |
| 年度： | 2011 |
| 類別： |
期刊論文
Applied Surface Science
|
| 摘要： | Aluminum-doped ZnO (AZO) thin films with alternating stacks of ZnO and Al2O3 were grown by atomic
layer deposition (ALD) on c-face sapphire substrates. Post-deposition rapid thermal annealing (RTA) at
950 ?C for 5 min was conducted in all AZO samples. The X-ray diffraction patterns demonstrate that the
intensity of cubic ZnAl2O4 (3 1 1) peaks grow with the increase of Al content, which implies the diffusion
of Al atoms into ZnO. The reduction of dominant peak intensity of cubic ZnO (1 1 1) and the increase of
hexagonal ZnO (1 0 0) and (1 0 1) peaks intensity suggest that there were variations of crystal structures
for the samples with Al content above 6%. Two orders of magnitude of electron concentration raises in
samples with 2 and 4% Al content compared with the as-grown without RTA-treated samples. It also infers
that RTA facilitates diffusion of Al atoms in AZO material structures and activation of Al dopants. When
Al content is above 6%, the variations of crystal structures with the enhancement of biaxial compressive
strain result in blue shift in energy of photoluminescence peak and in frequency of Ehigh
2 phonon mode of
micro-Raman spectra. The deterioration of crystal quality due to the increase of strain-induced defects
hinders the electrical and optical performance when Al doping concentration is above 6% in AZO materials. |
| 關鍵字： | Atomic layer deposition; Rapid thermal annealing; Aluminum-doped ZnO |
| 著作名稱： | ZnO-based heterojunction light-emitting diodes on p-SiC(4H) grown by atomic layer deposition |
| 年度： | 2010 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Amplified spontaneous emission from ZnO in n-ZnO/p-GaN heterojunction light-emitting diodes with an external-feedback reflector |
| 年度： | 2010 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Enhanced photoluminescence from condensed electron-hole pairs in trenched Si |
| 年度： | 2010 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Low-Threshold Stimulated Emission in ZnO Thin Films Grown by Atomic Layer Deposition |
| 年度： | 2008 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Carrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nano-cluster structures |
| 年度： | 2007 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Carrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nano-cluster structures |
| 年度： | 2007 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Depth Dependence of Optical Property beyond the Critical Thickness of an InGaN Film |
| 年度： | 2006 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Carrier Localization Effects in Polarized InGaN Multiple Quantum Wells |
| 年度： | 2005 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Photoluminescence Temperature Behavior and Monte Carlo Simulations of Exciton Hopping in InGaN Multiple Quantum Wells |
| 年度： | 2005 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Monte Carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells |
| 年度： | 2005 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Exciton hopping in InGaN multiple quantum wells |
| 年度： | 2005 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Effects of Interfacial Layers in InGaN/GaN Quantum Well Structures on Their Optical and Nanostructure Properties |
| 年度： | 2005 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Effects of Silicon Doping on the Nanostructures of InGaN/GaN Quantum Wells |
| 年度： | 2005 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Excitation power dynamics of photoluminescence in InGaN/GaN quantum wells with enhanced carrier localization |
| 年度： | 2004 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Carrier Relaxation in InGaN/GaN Quantum Wells with nm-scale Cluster Structures |
| 年度： | 2004 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Improvements of InGaN/GaN quantum well interfaces and radiative efficiency with InN interfacial layers |
| 年度： | 2004 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions |
| 年度： | 2004 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Impact of post-growth thermal annealing on emission of InGaN/GaN multiple quantum wells |
| 年度： | 2004 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Quantum-well thickness dependence of stimulated emission in InGaN/GaN structures |
| 年度： | 2003 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions |
| 年度： | 2003 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Quantum dot formation in InGaN/GaN quantum well structures with silicon doping and its implication in the mechanisms of radiative efficiency improvement |
| 年度： | 2003 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Quantum well width dependencies of post-growth thermal annealing effects of InGaN/GaN quantum wells |
| 年度： | 2003 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Mechanisms for photon emission enhancement with silicon doping in InGaN/GaN quantum well structures |
| 年度： | 2003 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | A microstructure study of post-growth thermally annealed InGaN/GaN quantum well structures of various well widths |
| 年度： | 2003 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Quantum dot formation with silicon doping in InGaN/GaN quantum well structures and its implications in radiative mechanisms |
| 年度： | 2003 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Optical and material characteristics of InGaN/GaN quantum well structures with embedded quantum dots |
| 年度： | 2003 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells |
| 年度： | 2002 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Quasi-regular quantum-dot-like structure formation with post-growth thermal annealing in InGaN/GaN quantum wells |
| 年度： | 2002 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Activation of p-type GaN with irradiation of the second-harmonics of a Q-switched Nd:YAG laser |
| 年度： | 2001 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Laser-induced activation of p-type GaN |
| 年度： | 2001 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | On indium segregation in InGaN/GaN quantum well structures |
| 年度： | 2001 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells |
| 年度： | 2000 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Electroreflectance and Photoreflectance Studies of Surface Fermi Level and Surface Densities of InP SIN+ Structures |
| 年度： | 2000 |
| 類別： |
期刊論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Stimulated Emission from ZnO Thin Films grown by Atomic Layer Deposition |
| 年度： | 2007 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Optical Behaviors of Quantum Dots in InGaN/GaN Quantum-well Structures of Different Silicon Doping Conditions |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Quantum-dot-like InGaN Nanostructures and Their Optical Characteristics |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Ultrafast carrier relaxation in InGaN/GaN quantum wells with nm-scale cluster structures |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Optical behaviors of quantum dots in InGaN/GaN quantum-well structures of different silicon doping conditions |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Quantum-dot-like InGaN nanostructures and their optical characteristics |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Monte carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Photoluminescence temperature behavior and Monte Carlo simulation of exciton hopping in InGaN multiple quantum wells |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Carrier localization effect in polarized InGaN/GaN multiple quantum wells |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Ultrafast carrier relaxation in InGaN/GaN quantum wells with nm-scale cluster structure |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Improvements of InGaN/GaN quantum well quality and radiative efficiency with InN interfacial layers |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Photoluminescence temperature behavior and Monte Carlo simulation of exciton hopping in InGaN multiple quantum wells |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Effects of interface thin layers in InGaN/GaN quantum well structures |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Mechanisms of emission enhancement with silicon doping in InGaN/GaN quantum wells |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Quantum dot structures in silicon-doped InGaN/GaN quantum wells |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping |
| 年度： | 2004 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Self-organized InGaN Quantum Dots,” JAPAN-TAIWAN Joint Seminar: Toward Formation New Network Between Physics and Chemistry on the Frontiers of Material Science |
| 年度： | 2003 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Gain characteristics of InGaN/GaN quantum well structures with various silicon doping conditions |
| 年度： | 2003 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Study on ultra-fast carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures |
| 年度： | 2003 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Optical and material properties of self-organized InGaN quantum dots |
| 年度： | 2003 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Influence of built-in electric field and localization on carrier dynamics in AlInGaN quantum wells |
| 年度： | 2003 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Effects of post-growth thermal annealing of InGaN/GaN QWs with silicon doping |
| 年度： | 2003 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Quantum-well thickness dependence of stimulated emission in InGaN/GaN structures |
| 年度： | 2003 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Structure variations of InGaN quantum dots upon thermal annealing in InGaN/GaN quantum wells and their impacts on photon emission properties |
| 年度： | 2003 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Quantum dot formation with silicon doping in InGaN/GaN quantum well Structures and its implications in radiative mechanisms |
| 年度： | 2003 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Optical and material characteristics of InGaN/GaN quantum well structures with embedded quantum dots |
| 年度： | 2002 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells |
| 年度： | 2002 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Formation of quantum dots and their material and optical characteristics in growing InGaN/GaN quantum well structures |
| 年度： | 2002 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Thermal annealing effects of InGaN/GaN multiple quantum well structures with different quantum well widths |
| 年度： | 2002 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Optical and material characteristics of InGaN/GaN quantum well structures with various silicon doping conditions |
| 年度： | 2002 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Quantum dot formation with post-growth thermal annealing of InGaN/GaN quantum wells |
| 年度： | 2002 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Formation of quasi-regular quantum Dots with post-growth thermal annealing and their optical characteristics in InGaN/GaN quantum wells |
| 年度： | 2002 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Carrier confinement and piezoelectric field of InGaN/GaN multiple quantum wells with silicon doping |
| 年度： | 2002 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Activation of p-type GaN with irradiation of the second-harmonics of a Q-switched Nd:YAG laser |
| 年度： | 2001 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Material characterization of InGaN/GaN multiple quantum well structures with various indium contents |
| 年度： | 2001 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Microstructure studies of InGaN/GaN multiple quantum wells |
| 年度： | 2001 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | On indium segregation in InGaN/GaN quantum well structures |
| 年度： | 2001 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | 原子層沉積成長高鎂含量的氧化鎂鋅薄膜性質” |
| 年度： | 2012 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | 有效降低氮化鎵成長於矽基板上的裂紋 |
| 年度： | 2012 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | 高摻雜效應在原子層沉積成長鋁摻雜氧化鋅之研究 |
| 年度： | 2012 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | 以光調制光譜、光激發光譜及拉曼光譜研究摻雜砷氧化鋅薄膜的特性 |
| 年度： | 2010 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Optical characteristics of the surface of bulk ZnO and interface of Al2O3/ZnO by photoreflectance |
| 年度： | 2009 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Femtosecond pump-probe studies on carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures |
| 年度： | 2003 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Dependencies of optical and material properties on normal indium content and well width in InGaN/GaN quantum well structures |
| 年度： | 2003 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |
| 著作名稱： | Activation of p-type GaN with irradiation of 532-nm Laser |
| 年度： | 2000 |
| 類別： |
會議論文
|
| 摘要： | |
| 關鍵字： | |