國立臺南大學專任教師基本資料
姓名鄭永楨
系所材料科學系
職稱副教授
校內分機669
EMAILchengyc@mail.nutn.edu.tw
辦公室格致樓508
網址http://www.material.nutn.edu.tw/html/ms/teacher_item/personal/NL/changyc.htm
專長/研究領域光電半導體
學位畢業學校國別主修學門修業期間
博士國立臺灣大學中華民國光電工程~
服務機關部門系所職稱服務期間
國立臺南大學研發處國際事務組組長~
國立臺南大學材料科學系副教授~~
國立臺南大學材料科學系助理教授~~~
著作名稱:Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-well Structures with Silicon Doping
年度:2006
類別:專書
摘要:
關鍵字:
著作名稱:Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods
年度:2017
類別:期刊論文
摘要:We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 μm undoped GaN template on top of a (0001)-direction sapphire substrate. A 100 nm SiO2 thin film is deposited on top as a masking pattern layer. This layer is then covered with a 300 nm aluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. After oxalic acid etching, we transfer the hole pattern from the AAO layer to the SiO2 layer by reactive ion etching. Lastly, we utilize metal-organic chemical vapor deposition to grow GaN nanorods approximately 1.5 μm in size. We then grow two layers of InGaN/GaN double quantum wells on the semi-polar face of the GaN nanorod substrate under different temperatures. We then study the characteristics of the InGaN/GaN quantum wells formed on the semi-polar faces of GaN nanorods. We report the following findings from our study: first, using SiO2 with repeating hole pattern, we are able to grow high-quality GaN nanorods with diameters of approximately 80-120 nm; second, photoluminescence (PL) measurements enable us to identify Fabry-Perot effect from InGaN/GaN quantum wells on the semi-polar face. We calculate the quantum wells’ cavity thickness with obtained PL measurements. Lastly, high resolution TEM images allow us to study the lattice structure characteristics of InGaN/GaN quantum wells on GaN nanorod and identify the existence of threading dislocations in the lattice structure that affects the GaN nanorod’s growth mechanism.
關鍵字:
著作名稱:The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs
年度:2016
類別:期刊論文
摘要:First two to five barriers in the growth sequence having silicon (Si) doping of eight periods In0.2Ga0.8N/GaN quantum wells (QWs) on twenty pairs of In0.02Ga0.98N/GaN superlattice strain relief layers (SRLs) of blue LEDs were prepared by low pressure metal-organic chemical vapor deposition (LPMOCVD) system on patterned sapphire substrates (PSSs). The effect of doping layers on the luminescence properties of QWs of blue LEDs was investigated. For the sample with first four barriers having Si doping, formation of soft confinement of QWs potential and strong carrier localization inside QWs were occurred. There is better spread of carriers among eight QWs and strong radiative recombination of carriers inside QWs. The increase of output power and external quantum efficiency (EQE) is due to decrease of Auger processes, leakage of carriers out of QWs, and nonradiative recombination centers. The consequences demonstrate that first four barriers with Si doping possess the favorable doping condition for eight periods In0.2Ga0.8N/GaN QWs.
關鍵字:InGaN/GaN quantum wells (QWs) Silicon (Si)doping Soft confinement potential Quantum-confined Stark effect (QCSE) Auger processes External quantum efficiency (EQE)
著作名稱:8.13 μm in length and CMOS compatible polarization beam splitter based on an asymmetrical directional coupler
年度:2016
類別:期刊論文
摘要:A compact silicon polarization beam splitter (PBS) is proposed based on an asymmetrical directional coupler consisting of a wide waveguide and a dielectric loaded narrow waveguide. Given that TE and TM polarizations are the dominant mode in the wide and narrow waveguides, respectively, a perfect phase-matching condition in the TM mode but a huge phase mismatching in the TE mode can be achieved. Therefore, the TE mode is almost uncoupled regardless of device length but the TM mode can only completely couple to the cross port at an appropriate coupling length. An ultrashort (∼8.13 μm long) PBS is designed based on a silicon-on-insulator nanowire with a loading refractive index of 2.0 and a gap width of 200 nm. Numerical simulations show that the proposed PBS has a broad bandwidth (∼100 nm) with large extinction ratio (>10 dB) and low insertion loss (0.61 dB). The fabrication-error tolerance of the PBS is also discussed.
關鍵字:
著作名稱:Photoreflectance study of the near-band-edge transitions of chemical vapor deposition grown mono- and few-layer MoS2 films
年度:2016
類別:期刊論文
摘要:Room-temperature photoreflectance (PR) and reflectance (R) spectroscopy are utilized to investigate the near-band-edge transitions of molybdenum disulfide (MoS2) thin films grown on sapphire substrates by a hot-wall chemical vapor deposition system. The layer thickness and optical properties of the MoS2 thin films are confirmed by Raman spectroscopy, atomic force microscope, and photoluminescence (PL) analysis. The B exciton shows relatively weak PL intensity in comparing with the A exciton even for monolayer MoS2 films. In the R spectrum of few-layer MoS2, it is not possible to clearly observe exciton related features. The PR spectra have two sharp, derivative-like features on a featureless background. Throughout the PR lineshape fitting, the transition energies are designated as the A and B excitons at the K-point of the Brillouin zone, but at room temperature there seems to be no distinguishable feature corresponding to an H-point transition for the mono- and few-layer MoS2 films unlike in bulk. These transition energies are slightly larger than those obtained by PL, which is attributed to the Stokes shifts related to doping level. The obtained values of valence-band spin-orbit splitting are in good agreement with those from other experimental methods. By comparing the PR lineshapes, the dominant modulation mechanism is attributed to variations of the exciton transition energies due to change in the built-in electric field. On the strength of this study, PR spectroscopy is demonstrated as a powerful technique for characterizing the near-band-edge transitions of MoS2 from monolayer to bulk.
關鍵字:
著作名稱:Ultra compact polarization rotator in an asymmetric single dielectric loaded rib waveguide
年度:2016
類別:期刊論文
摘要:A compact polarization rotator (PR) with an asymmetric single dielectric loaded rib waveguide is proposed. The core of the waveguide is designed to have a specific rectangular configuration. The waveguide requires only a single asymmetrical dielectric loading on the core to complete the polarization conversion. The optical field is confined to the vicinity of the core center, which matches the optical field of the input/output waveguides. The transition loss of the PR is as low as 0.03–0.21 dB/facet without the taper or offset schemes. Such results can facilitate the fabrication of a PR with an operating length of 10 μm. In a comprehensively designed PR with a length of 7.92 μm, a −1 dB bandwidth for polarization conversion efficiency (PCE) is greater than 100 nm at the communicating wavelength of 1550 nm. The loading width and thickness with 20 nm tolerance exhibit −0.87 and −0.49 dB changes in PCE, respectively.
關鍵字:
著作名稱:ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 C with three-pulsed precursors in every growth cycle
年度:2016
類別:期刊論文
摘要:Zinc oxide (ZnO) thin films are grown at various temperatures from 100 to 180 C by atomic layer deposition (ALD) with three-pulsed precursors per ALD cycle on sapphire (0001) substrates. In the texture analyses of x-ray diffraction (XRD), hexagonal (002) and (101) crystalline orientations are shown. The dominant diffraction is (002) above 140 C and (101) at and below 140 C. Hall effect measurements demonstrate remarkable decrease of free electron concentration below 140 C and the lowest value is 2.4  1016 cm3 at 100 C. Photoluminescence (PL) spectra of samples display no defect-related luminescence band. The emission peak energy of PL spectra show blueshift with the increase of temperature from 100 to 140 C, which is originated from band-filling (BursteineMoss) effect. However, redshift occurred at temperature above 140 C owing to bandgap renormalization (shrinkage) with the increase of free electron concentration. Enhancement of PL peak intensity and reduction of free electron concentration below 140 C result from the large decline of intrinsic donor-like defects. 140 C is a critical temperature for thermal activation of donors-like defects and alteration of dominant crystalline orientation as well as the electrical and optical behaviors in ZnO. The growth method also constitutes smooth surface of ZnO when it comes to the analysis of surface roughness of samples from topographic image forming by atomic force microscope (AFM).
關鍵字:Zinc oxide thin films Three-pulsed precursors Atomic layer deposition (ALD) Bursteine Moss effect Bandgap renormalization
著作名稱:The luminescence properties of eight periods In0.2Ga0.8N/GaN multiple quantum wells with silicon doping in the first two to five barriers of blue LEDs
年度:2016
類別:期刊論文
摘要:We have been carrying out researches on luminescence properties of first two to five barriers in the growth sequence with silicon (Si) doping of eight periods In0.2Ga0.8N/GaN quantum wells (QWs) and we have published papers in Journal of Luminescence, Vol. 177, pp. 59–64, 2016. This paper provides more information on their properties. Epilayers are grown by low pressure metal-organic chemical vapor deposition (LPMOCVD) system on patterned sapphire substrates (PSSs). For the sample’s QWs containing first four barriers with Si doping, photoluminescence (PL) demonstrates the strongest intensity and relative larger spectral linewidth than other samples. It is originated from the increase of radiative recombination centers due to the effective reduction of quantum confined Stark effects (QCSE) and enhancements of carrier localization inside QWs. Higher output power and external quantum efficiency (EQE) are also shown in this blue LED. Soft confinement among QWs leads to reduction of Auger processes, leakage of carriers out of QWs, and nonradiative recombination centers in this sample. First four barriers with Si doping is the favorable doping condition for eight periods In0.2Ga0.8N/GaN QWs.
關鍵字:InGaN/GaN quantum wells (QWs), Silicon (Si) doping, Soft confinement potential, Quantum-confined Stark effect (QCSE), Auger processes, External quantum efficiency (EQE)
著作名稱:Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy
年度:2015
類別:期刊論文
摘要:Temperature-dependent photoluminescence (PL) and photoreflectance (PR) spectroscopy and room-temperature Raman spectroscopy and X-ray diffraction have been utilized to investigate the optical properties, electron concentration, crystalline quality, and electronic band structures, especially valence-band splittings, of InN films grown by plasma-assisted molecular beam epitaxy (PAMBE) and metal–organic chemical vapor deposition (MOCVD). The smaller thermal activation energies imply the PAMBE-grown InN film exhibits low-density localized states from band tail states. PR signals of the InN film are detectable when the temperature is below about 100K due to the cooling down of free electrons to trap states. For the MOCVD-grown InN film, no PR signal is observed even at 15K due to the higher free electron concentration. To analyze the energetic positions of the features in the PR spectra without ambiguity, the moduli of individual PR resonances are considered. Based on the PR results and appropriate Hamiltonian, the values of the crystal-field splitting and the spin–orbit splitting in InN are experimentally determined as 26.8 and 14.5meV, respectively. Theoretical and experimental reports are compared and discussed to verify this result.
關鍵字:
著作名稱:Growing high-quality ternary CdMnTe epilayers by molecular beam epitaxy on Si substrates and its mechanism
年度:2015
類別:期刊論文
摘要:Cd(Mn,Zn)Te-based ternary compound semiconductors with wide band-gaps are important in the detection of radiation and photovoltaic applications. This study characterizes Cd1-xMnxTe epilayers on Si substrates with various Mn compositions grown by molecular beam epitaxy. The surface smoothness, crystallinity and optical quality all are significantly improved with increasing Mn content. The Cd0.61Mn0.39Te epilayer with a thickness of only about 500 nm yields a full width at half maximum of the X-ray rocking curve of 165 arcsec. Photoluminescence spectra at 10 K show that the intensity of defect-related emissions is much lower than that of binary CdTe epilayers, reaching zero from the samples with high Mn content, while the integral intensity of the exciton-related emissions is increased by more than two orders of magnitude. Raman scattering spectra reveal that the intensity of the TeeTe related defect vibration modes falls significantly as the Mn content increase, even disappearing altogether in the samples with high Mn content. This work proposes that incorporating Mn atoms during epitaxial growth can promote the decomposition of Te2 sources, owing to the high sticking coefficient of Mn and the high cohesive energy of the MneTe bond, and then reduce the number of TeeTe related stacking fault defects, yielding high-quality CdMnTe epilayers. Our results herein demonstrate that the CdMnTe ternary epilayers are much more promising in terms of material quality than the CdZnTe ternary epilayers.
關鍵字:Ternary CdMnTe epilayer Molecular beam epitaxy Si substrate X-ray diffraction Photoluminescence Raman scattering
著作名稱:Crack-freeGaNdepositiononSisubstratewithtemperature-gradedAlN buffergrowthandtheemissioncharacteristicsofovergrownInGaN/GaN quantumwells
年度:2014
類別:期刊論文
摘要:The techniqueofdepositingatemperature-gradedAlNbufferlayerforcrack-freeGaNgrowthonSi substrateisdemonstrated.Comparedwiththepreviouslyreportedmethodsofbuffergrowth,this techniquehastheadvantagesofathinnerbufferlayerforeffectivelyproducingcompressivestressand simple binarygrowthwithouttheneedofchangingitscomposition.Bycombiningwithaninter-layer structure ofthree-periodGaN/AlNsuperlattice,crack-freegrowthofthickGaNlayersof3.7 μm intotal thickness isimplemented.Also,thedifferentemissionbehaviorsofovergrownInGaN/GaNquantum wells (QWs)underdifferentstressconditionswithdifferentgradedtemperaturenumbersareillustrated. It isfoundthattheQWsamplewiththehighestgradedtemperaturenumberfordepositingtheAlN buffer hastheweakestresidualtensilestress,theshortestemissionwavelength,theweakestcarrier localization effect,theweakestquantum-confined Starkeffect,andthehighestinternalquantum efficiency,eventhoughthetotalindiumcontentisaboutthesameasthoseofothersampleswith significantly strongerresidualstresses.
關鍵字:Nanostructures Metalorganic chemical vapor deposition Nitrides Semiconducting III–V materials
著作名稱:Nanostructure study of the coalescence growth of GaN columns with molecular beam epitaxy
年度:2013
類別:期刊論文
摘要:We investigate the structural properties of molecular-beamepitaxy coalescence overgrowth of GaN columns at the nanoscale with transmission electron microscopy and other characterization techniques. Two samples grown over nanocolumns of different widths and spatial densities (columns/area) are compared. It is found that columns with a larger cross section (~500 nm) and correspondingly lower spatial density normally lead to un-coalesced overgrown domains ranging 5-8 μm in size. On the other hand, the overgrowth on the columns of a smaller cross section (~100 nm) and correspondingly higher density results in coalesced domains ranging from 1 to 5 μm in size. It is believed that among the smaller, more closely spaced columns the strain distribution resulting from overgrowth is more effective in leading to the uniformity of crystalline orientation, and hence successful coalescence. The optical characterization leads to the conclusion that the defect density in the sample grown on smaller columns is lower when compared with that grown on larger columns.
關鍵字:Electro-optical materials; Photonic bandgap materials; Subwavelength structures, nanostructures.
著作名稱:Nanostructure study of the coalescence growth of GaN columns with molecular beam epitaxy
年度:2013
類別:期刊論文
摘要:We investigate the structural properties of molecular-beamepitaxy coalescence overgrowth of GaN columns at the nanoscale with transmission electron microscopy and other characterization techniques. Two samples grown over nanocolumns of different widths and spatial densities (columns/area) are compared. It is found that columns with a larger cross section (~500 nm) and correspondingly lower spatial density normally lead to un-coalesced overgrown domains ranging 5-8 μm in size. On the other hand, the overgrowth on the columns of a smaller cross section (~100 nm) and correspondingly higher density results in coalesced domains ranging from 1 to 5 μm in size. It is believed that among the smaller, more closely spaced columns the strain distribution resulting from overgrowth is more effective in leading to the uniformity of crystalline orientation, and hence successful coalescence. The optical characterization leads to the conclusion that the defect density in the sample grown on smaller columns is lower when compared with that grown on larger columns.
關鍵字:
著作名稱:Nanostructure study of the coalescence growth of GaN columns with molecular beam epitaxy
年度:2013
類別:期刊論文
摘要:We investigate the structural properties of molecular-beamepitaxy coalescence overgrowth of GaN columns at the nanoscale with transmission electron microscopy and other characterization techniques. Two samples grown over nanocolumns of different widths and spatial densities (columns/area) are compared. It is found that columns with a larger cross section (~500 nm) and correspondingly lower spatial density normally lead to un-coalesced overgrown domains ranging 5-8 μm in size. On the other hand, the overgrowth on the columns of a smaller cross section (~100 nm) and correspondingly higher density results in coalesced domains ranging from 1 to 5 μm in size. It is believed that among the smaller, more closely spaced columns the strain distribution resulting from overgrowth is more effective in leading to the uniformity of crystalline orientation, and hence successful coalescence. The optical characterization leads to the conclusion that the defect density in the sample grown on smaller columns is lower when compared with that grown on larger columns.
關鍵字: GaN, molecular beam epitaxy
著作名稱:Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing
年度:2011
類別:期刊論文
摘要:
關鍵字:
著作名稱:Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition
年度:2011
類別:期刊論文
摘要:Aluminum-doped ZnO (AZO) thin films with alternating stacks of ZnO and Al2O3 were grown by atomic layer deposition (ALD) on c-face sapphire substrates. Post-deposition rapid thermal annealing (RTA) at 950 ?C for 5 min was conducted in all AZO samples. The X-ray diffraction patterns demonstrate that the intensity of cubic ZnAl2O4 (3 1 1) peaks grow with the increase of Al content, which implies the diffusion of Al atoms into ZnO. The reduction of dominant peak intensity of cubic ZnO (1 1 1) and the increase of hexagonal ZnO (1 0 0) and (1 0 1) peaks intensity suggest that there were variations of crystal structures for the samples with Al content above 6%. Two orders of magnitude of electron concentration raises in samples with 2 and 4% Al content compared with the as-grown without RTA-treated samples. It also infers that RTA facilitates diffusion of Al atoms in AZO material structures and activation of Al dopants. When Al content is above 6%, the variations of crystal structures with the enhancement of biaxial compressive strain result in blue shift in energy of photoluminescence peak and in frequency of Ehigh 2 phonon mode of micro-Raman spectra. The deterioration of crystal quality due to the increase of strain-induced defects hinders the electrical and optical performance when Al doping concentration is above 6% in AZO materials.
關鍵字:Atomic layer deposition; Rapid thermal annealing; Aluminum-doped ZnO
著作名稱:ZnO-based heterojunction light-emitting diodes on p-SiC(4H) grown by atomic layer deposition
年度:2010
類別:期刊論文
摘要:
關鍵字:
著作名稱:Amplified spontaneous emission from ZnO in n-ZnO/p-GaN heterojunction light-emitting diodes with an external-feedback reflector
年度:2010
類別:期刊論文
摘要:
關鍵字:
著作名稱:Enhanced photoluminescence from condensed electron-hole pairs in trenched Si
年度:2010
類別:期刊論文
摘要:
關鍵字:
著作名稱:Low-Threshold Stimulated Emission in ZnO Thin Films Grown by Atomic Layer Deposition
年度:2008
類別:期刊論文
摘要:
關鍵字:
著作名稱:Carrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nano-cluster structures
年度:2007
類別:期刊論文
摘要:
關鍵字:
著作名稱:Carrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nano-cluster structures
年度:2007
類別:期刊論文
摘要:
關鍵字:
著作名稱:Depth Dependence of Optical Property beyond the Critical Thickness of an InGaN Film
年度:2006
類別:期刊論文
摘要:
關鍵字:
著作名稱:Carrier Localization Effects in Polarized InGaN Multiple Quantum Wells
年度:2005
類別:期刊論文
摘要:
關鍵字:
著作名稱:Photoluminescence Temperature Behavior and Monte Carlo Simulations of Exciton Hopping in InGaN Multiple Quantum Wells
年度:2005
類別:期刊論文
摘要:
關鍵字:
著作名稱:Monte Carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells
年度:2005
類別:期刊論文
摘要:
關鍵字:
著作名稱:Exciton hopping in InGaN multiple quantum wells
年度:2005
類別:期刊論文
摘要:
關鍵字:
著作名稱:Effects of Interfacial Layers in InGaN/GaN Quantum Well Structures on Their Optical and Nanostructure Properties
年度:2005
類別:期刊論文
摘要:
關鍵字:
著作名稱:Effects of Silicon Doping on the Nanostructures of InGaN/GaN Quantum Wells
年度:2005
類別:期刊論文
摘要:
關鍵字:
著作名稱:Excitation power dynamics of photoluminescence in InGaN/GaN quantum wells with enhanced carrier localization
年度:2004
類別:期刊論文
摘要:
關鍵字:
著作名稱:Carrier Relaxation in InGaN/GaN Quantum Wells with nm-scale Cluster Structures
年度:2004
類別:期刊論文
摘要:
關鍵字:
著作名稱:Improvements of InGaN/GaN quantum well interfaces and radiative efficiency with InN interfacial layers
年度:2004
類別:期刊論文
摘要:
關鍵字:
著作名稱:Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
年度:2004
類別:期刊論文
摘要:
關鍵字:
著作名稱:Impact of post-growth thermal annealing on emission of InGaN/GaN multiple quantum wells
年度:2004
類別:期刊論文
摘要:
關鍵字:
著作名稱:Quantum-well thickness dependence of stimulated emission in InGaN/GaN structures
年度:2003
類別:期刊論文
摘要:
關鍵字:
著作名稱:Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions
年度:2003
類別:期刊論文
摘要:
關鍵字:
著作名稱:Quantum dot formation in InGaN/GaN quantum well structures with silicon doping and its implication in the mechanisms of radiative efficiency improvement
年度:2003
類別:期刊論文
摘要:
關鍵字:
著作名稱:Quantum well width dependencies of post-growth thermal annealing effects of InGaN/GaN quantum wells
年度:2003
類別:期刊論文
摘要:
關鍵字:
著作名稱:Mechanisms for photon emission enhancement with silicon doping in InGaN/GaN quantum well structures
年度:2003
類別:期刊論文
摘要:
關鍵字:
著作名稱:A microstructure study of post-growth thermally annealed InGaN/GaN quantum well structures of various well widths
年度:2003
類別:期刊論文
摘要:
關鍵字:
著作名稱:Quantum dot formation with silicon doping in InGaN/GaN quantum well structures and its implications in radiative mechanisms
年度:2003
類別:期刊論文
摘要:
關鍵字:
著作名稱:Optical and material characteristics of InGaN/GaN quantum well structures with embedded quantum dots
年度:2003
類別:期刊論文
摘要:
關鍵字:
著作名稱:Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells
年度:2002
類別:期刊論文
摘要:
關鍵字:
著作名稱:Quasi-regular quantum-dot-like structure formation with post-growth thermal annealing in InGaN/GaN quantum wells
年度:2002
類別:期刊論文
摘要:
關鍵字:
著作名稱:Activation of p-type GaN with irradiation of the second-harmonics of a Q-switched Nd:YAG laser
年度:2001
類別:期刊論文
摘要:
關鍵字:
著作名稱:Laser-induced activation of p-type GaN
年度:2001
類別:期刊論文
摘要:
關鍵字:
著作名稱:On indium segregation in InGaN/GaN quantum well structures
年度:2001
類別:期刊論文
摘要:
關鍵字:
著作名稱:Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
年度:2000
類別:期刊論文
摘要:
關鍵字:
著作名稱:Electroreflectance and Photoreflectance Studies of Surface Fermi Level and Surface Densities of InP SIN+ Structures
年度:2000
類別:期刊論文
摘要:
關鍵字:
著作名稱:Stimulated Emission from ZnO Thin Films grown by Atomic Layer Deposition
年度:2007
類別:研討會
摘要:
關鍵字:
著作名稱:Optical Behaviors of Quantum Dots in InGaN/GaN Quantum-well Structures of Different Silicon Doping Conditions
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Quantum-dot-like InGaN Nanostructures and Their Optical Characteristics
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Ultrafast carrier relaxation in InGaN/GaN quantum wells with nm-scale cluster structures
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Optical behaviors of quantum dots in InGaN/GaN quantum-well structures of different silicon doping conditions
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Quantum-dot-like InGaN nanostructures and their optical characteristics
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Monte carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Photoluminescence temperature behavior and Monte Carlo simulation of exciton hopping in InGaN multiple quantum wells
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Carrier localization effect in polarized InGaN/GaN multiple quantum wells
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Ultrafast carrier relaxation in InGaN/GaN quantum wells with nm-scale cluster structure
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Improvements of InGaN/GaN quantum well quality and radiative efficiency with InN interfacial layers
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Photoluminescence temperature behavior and Monte Carlo simulation of exciton hopping in InGaN multiple quantum wells
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Effects of interface thin layers in InGaN/GaN quantum well structures
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Mechanisms of emission enhancement with silicon doping in InGaN/GaN quantum wells
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Quantum dot structures in silicon-doped InGaN/GaN quantum wells
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping
年度:2004
類別:研討會
摘要:
關鍵字:
著作名稱:Self-organized InGaN Quantum Dots,” JAPAN-TAIWAN Joint Seminar: Toward Formation New Network Between Physics and Chemistry on the Frontiers of Material Science
年度:2003
類別:研討會
摘要:
關鍵字:
著作名稱:Gain characteristics of InGaN/GaN quantum well structures with various silicon doping conditions
年度:2003
類別:研討會
摘要:
關鍵字:
著作名稱:Study on ultra-fast carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures
年度:2003
類別:研討會
摘要:
關鍵字:
著作名稱:Optical and material properties of self-organized InGaN quantum dots
年度:2003
類別:研討會
摘要:
關鍵字:
著作名稱:Influence of built-in electric field and localization on carrier dynamics in AlInGaN quantum wells
年度:2003
類別:研討會
摘要:
關鍵字:
著作名稱:Effects of post-growth thermal annealing of InGaN/GaN QWs with silicon doping
年度:2003
類別:研討會
摘要:
關鍵字:
著作名稱:Quantum-well thickness dependence of stimulated emission in InGaN/GaN structures
年度:2003
類別:研討會
摘要:
關鍵字:
著作名稱:Structure variations of InGaN quantum dots upon thermal annealing in InGaN/GaN quantum wells and their impacts on photon emission properties
年度:2003
類別:研討會
摘要:
關鍵字:
著作名稱:Quantum dot formation with silicon doping in InGaN/GaN quantum well Structures and its implications in radiative mechanisms
年度:2003
類別:研討會
摘要:
關鍵字:
著作名稱:Optical and material characteristics of InGaN/GaN quantum well structures with embedded quantum dots
年度:2002
類別:研討會
摘要:
關鍵字:
著作名稱:Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells
年度:2002
類別:研討會
摘要:
關鍵字:
著作名稱:Formation of quantum dots and their material and optical characteristics in growing InGaN/GaN quantum well structures
年度:2002
類別:研討會
摘要:
關鍵字:
著作名稱:Thermal annealing effects of InGaN/GaN multiple quantum well structures with different quantum well widths
年度:2002
類別:研討會
摘要:
關鍵字:
著作名稱:Optical and material characteristics of InGaN/GaN quantum well structures with various silicon doping conditions
年度:2002
類別:研討會
摘要:
關鍵字:
著作名稱:Quantum dot formation with post-growth thermal annealing of InGaN/GaN quantum wells
年度:2002
類別:研討會
摘要:
關鍵字:
著作名稱:Formation of quasi-regular quantum Dots with post-growth thermal annealing and their optical characteristics in InGaN/GaN quantum wells
年度:2002
類別:研討會
摘要:
關鍵字:
著作名稱:Carrier confinement and piezoelectric field of InGaN/GaN multiple quantum wells with silicon doping
年度:2002
類別:研討會
摘要:
關鍵字:
著作名稱:Activation of p-type GaN with irradiation of the second-harmonics of a Q-switched Nd:YAG laser
年度:2001
類別:研討會
摘要:
關鍵字:
著作名稱:Material characterization of InGaN/GaN multiple quantum well structures with various indium contents
年度:2001
類別:研討會
摘要:
關鍵字:
著作名稱:Microstructure studies of InGaN/GaN multiple quantum wells
年度:2001
類別:研討會
摘要:
關鍵字:
著作名稱:On indium segregation in InGaN/GaN quantum well structures
年度:2001
類別:研討會
摘要:
關鍵字:
著作名稱:原子層沉積成長高鎂含量的氧化鎂鋅薄膜性質”
年度:2012
類別:研討會
摘要:
關鍵字:
著作名稱:有效降低氮化鎵成長於矽基板上的裂紋
年度:2012
類別:研討會
摘要:
關鍵字:
著作名稱:高摻雜效應在原子層沉積成長鋁摻雜氧化鋅之研究
年度:2012
類別:研討會
摘要:
關鍵字:
著作名稱:以光調制光譜、光激發光譜及拉曼光譜研究摻雜砷氧化鋅薄膜的特性
年度:2010
類別:研討會
摘要:
關鍵字:
著作名稱:Optical characteristics of the surface of bulk ZnO and interface of Al2O3/ZnO by photoreflectance
年度:2009
類別:研討會
摘要:
關鍵字:
著作名稱:Femtosecond pump-probe studies on carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures
年度:2003
類別:研討會
摘要:
關鍵字:
著作名稱:Dependencies of optical and material properties on normal indium content and well width in InGaN/GaN quantum well structures
年度:2003
類別:研討會
摘要:
關鍵字:
著作名稱:Activation of p-type GaN with irradiation of 532-nm Laser
年度:2000
類別:研討會
摘要:
關鍵字: