國立臺南大學教師基本資料

基本資料
姓名 鄭建星
系所 材料科學系
職稱 教師
校內分機 592
傳真
辦公室/研究室 C411
E-mail jsjeng@mail.nutn.edu.tw
網址
專長/研究領域 薄膜電晶體,變阻式記憶體,抗反射薄膜製備,薄膜製程
 

畢業學校國別主修學門學位修業期間

服務機關部門 / 系所職稱服務期間

著作
名稱High carrier mobility and electrical stability under negative bias illumination stress of ZnO thin-film transistors with N2O plasma treated HfOx gate dielectrics
年度2013
類別期刊論文
摘要ZnO thin-film transistors (TFTs) using high-k hafnium oxide (HfO)x as the gate dielectrics achieve a low operating voltage of below 1V. A negative threshold voltage shift of devices was observed after the negative bias illumination stress (NBIS) from a 635 nm laser. Plasma treatment of the HfOx dielectric surface using different gases (i.e., N2O and O2) was used to improve the TFTs’ electrical stability. By calculating the subthreshold swing and analyzing the oxygen chemical bonding states nearby the ZnO/HfOx interface by x-ray photoelectron spectroscopy, we found that the interface trapped state and oxygen vacancies existed in ZnO active layer caused this unstable performance. The stability of ZnO TFTs is improved with using N2O plasma-treated HfOx dielectric, as this eliminate the defect in the ZnO layer.
關鍵字carrier mobility, negative bias illumination stress, and Thin Film Transistor
名稱Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors
年度2014
類別期刊論文
摘要Solution-processed ultra-thin (?3 nm) zinc tin oxide (ZTO) thin film transistors (TFTs) with a mobility of 8 cm2/Vs are obtained with post spin-coating annealing at only 350 °C. The effect of light illumination (at wavelengths of 405 nm or 532 nm) on the stability of TFT transfer characteristics under various gate bias stress conditions (zero, positive, and negative) is investigated. It is found that the ΔVth (Vthstress 3400 s ? stress 0 s) window is significantly positive when ZTO TFTs are under positive bias stress (PBS, ΔVth 9.98 V) and positive bias illumination stress (λ 405 nm and ΔVth 6.96 V), but ΔVth is slightly negative under only light illumination stress (λ 405 nm and ΔVth ?2.02 V) or negative bias stress (ΔVth ?2.27 V). However, the ΔVth of ZTO TFT under negative bias illumination stress is substantial, and it will efficiently recover the ΔVth caused by PBS. The result is attributed to the photo-ionization and subsequent transition of electronic states of oxygen vacancies (i.e., Vo, Vo+, and Vo++) in ZTO. A detailed mechanism is discussed to better understand the bias stress stability of solution processed ZTO TFTs.
關鍵字
名稱Ambient Constancy of Passivation-Free Ultra-Thin Zinc Tin Oxide Thin Film Transistor
年度2015
類別期刊論文
摘要An ultra-thin (5 nm-thick), unpassivated zinc tin oxide (ZTO) thin-film transistor TFT, fabricated with solution process, exhibits a good field-effect mobility (13 ∼ 14 cm2/Vs), small subthreshold swing (∼0.30 V/dec.) and high on/off current ratio (∼108). The field-effect mobility can be further enhanced by increasing the ZTOthickness to 12 nm and 22 nm. Furthermore, ID-VG characteristics of the 5 nm-thick ZTO TFT remain unaffected, regardless of working in air (60% relative humidity), vacuum or dry O2 atmosphere. The dissimilar TFT characteristics are discussed in terms of oxygen deficiency content, as well as the Fermi level position (EF to EC) for ZTO of various thicknesses to explain the moisture immunity of the 5 nm-thick solution-processed ZTO TFT.
關鍵字Thin Film Transistor, Solution process, Zinc tin oxide
名稱The influence of pH value and annealing temperature on the characteristics of ZnO–Ru composite films and their application in thin film transistors
年度2016
類別期刊論文
摘要ZnO–Ru thin films were prepared using a sol–gel spin coating method. We investigated the effects of the Rudoping concentration, the pH value of precursor and the annealing temperature on the characteristics of the ZnO–Ru thin films. The crystallinity of ZnO–Ru films decreases as the Ru-concentration increases. The surface morphology of the ZnO–Ru films is also related to the pH of the precursors. The optical energy band gap is a function of Ru-doping concentration and the annealing temperature. The correlations among the Zn/Ru ratio, the pH value of the pre-solutions, the annealing temperature and the characteristics of ZnO–Ru films are derived. In addition to the material properties, the application of ZnO–Ru films as a channel layer in thin film transistors is also discussed.
關鍵字thin film transistors, pH value, annealing temperature, ZnO–Ru
名稱Improvement of transistor characteristics and stability for solutionprocessed ultra-thin high-valence niobium doped zinc-tin oxide thin film transistors
年度2016
類別期刊論文
摘要Nb-doped Zinc tin oxide (NZTO) channel materials have been prepared by solution process in combination with the spin-coating method. All NZTO thin film transistors (TFTs) are n-type enhancementmode devices, either without or with Nb additives. High-valence niobium ion (ionic charge ¼ þ5) has a larger ionic potential and similar ionic radius to Zn2þ and Sn4þ ions. As compared with the pure ZTO device, introducing Nb5þ ions into the ZTO channel layers can improve the electrical properties and bias stability of TFTs because of the reduction of the oxygen vacancies. This study discusses the connection among the material properties of the NZTO films and the electrical performance and bias stability of NZTO TFTs and how they are influenced by the Nb/(Nb þ Sn) molar ratios of NZTO films.
關鍵字Thin film transistors
名稱Lithium-Induced Defect Levels in ZnO Nanoparticles To Facilitate Electron Transport in Inverted Organic Photovoltaics
年度2016
類別期刊論文
摘要In this work, lithium-doped zinc oxide nanoparticles (LZO NPs) with different Li/Zn molar ratios (Li/Zn 0, 0.05, 0.2) are successfully prepared to form an electron transporting layer (cathode buffer layer) in the inverted-type P3HT:ICBA organic photovoltaic (OPV) devices. As compared with the undoped ZnO NPs buffer layer, a considerable improvement OPVs from 2.344% to 2.946% is obtained by using 5%-LZO NPs as a buffer layer, which owns Jsc of 7.22 mA/cm2, Voc of 0.86 V, and FF of 47.4%. X-ray absorption near-edge structure (XANES) spectra show the increase of unoccupied O 2p-derived states in 5%-LZO NPs, which leads to better carrier conductance. The energy levels of defects in 5%-LZO NPs analyzed by photoluminescence are found to facilitate electron extraction to the cathode. Impedance measurement results indicate that the carrier lifetime is effectively increased to 2176 μs by applying the 5%-LZO NPs buffer layer, showing the improvement of carrier extraction efficiency and resulting in its progressive performance.
關鍵字